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Radnóczi, G. Z., Dodony, E., Battistig, G., Vouroutzis, N., Kavouras, P., Stoemenos, J., Frangis, N., Kovács, A., Pécz, B. (2016) Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si. Journal of Applied Physics, 119 (6). 65303pp. doi:10.1063/1.4941349

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Reference TypeJournal (article/letter/editorial)
TitleStructural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si
JournalJournal of Applied Physics
AuthorsRadnóczi, G. Z.Author
Dodony, E.Author
Battistig, G.Author
Vouroutzis, N.Author
Kavouras, P.Author
Stoemenos, J.Author
Frangis, N.Author
Kovács, A.Author
Pécz, B.Author
Year2016 (February 14)Volume119
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4941349Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5204876Long-form Identifiermindat:1:5:5204876:6
GUID0
Full ReferenceRadnóczi, G. Z., Dodony, E., Battistig, G., Vouroutzis, N., Kavouras, P., Stoemenos, J., Frangis, N., Kovács, A., Pécz, B. (2016) Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si. Journal of Applied Physics, 119 (6). 65303pp. doi:10.1063/1.4941349
Plain TextRadnóczi, G. Z., Dodony, E., Battistig, G., Vouroutzis, N., Kavouras, P., Stoemenos, J., Frangis, N., Kovács, A., Pécz, B. (2016) Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si. Journal of Applied Physics, 119 (6). 65303pp. doi:10.1063/1.4941349
In(2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing

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Vouroutzis, N., Stoemenos, J., Frangis, N., Radnóczi, G. Z., Knez, D., Hofer, F., Pécz, B. (2019) Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization. Scientific Reports, 9. doi:10.1038/s41598-019-39503-9
Radnóczi, György Zoltán, Knez, Daniel, Hofer, Ferdinand, Frangis, Nikolaos, Vouroutzis, Nikolaos, Stoemenos, John, Pécz, Béla (2017) Inclusions in Si whiskers grown by Ni metal induced lateral crystallization. Journal of Applied Physics, 121 (14). 145301pp. doi:10.1063/1.4979728
Pécz, B., Stoemenos, J., Voelskow, M., Skorupa, W., Dobos, L., Pongrácz, A., Battistig, G. (2009) Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere. Journal of Applied Physics, 105 (8). 83508pp. doi:10.1063/1.3089234
Gardelis, S., Nassiopoulou, A. G., Manousiadis, P., Vouroutzis, Ν., Frangis, N. (2013) A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping. Applied Physics Letters, 103 (24). 241114pp. doi:10.1063/1.4846595
Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C., Vouroutzis, N. (2005) Crystallization of amorphous-Si films by flash lamp annealing. Applied Surface Science, 242. 185-191 doi:10.1016/j.apsusc.2004.08.015
Pécz, B., di Forte-Poisson, M. A., Huet, F., Radnóczi, G., Tóth, L., Papaioannou, V., Stoemenos, J. (1999) Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition. Journal of Applied Physics, 86 (11). 6059-6067 doi:10.1063/1.371654
Pécz, B., El-Shaer, A., Bakin, A., Mofor, A.-C., Waag, A., Stoemenos, J. (2006) Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer. Journal of Applied Physics, 100 (10). 103506pp. doi:10.1063/1.2382669
Gardelis, S., Nassiopoulou, A. G., Vouroutzis, N., Frangis, N. (2009) Effect of exciton migration on the light emission properties in silicon nanocrystal ensembles. Journal of Applied Physics, 105 (11). 113509pp. doi:10.1063/1.3138811
Stoemenos, J., McIntosh, J., Economou, N. A., Bhatnagar, Y. K., Coxon, P. A., Lowe, A. J., Clark, M. G. (1991) Crystallization of amorphous silicon by reconstructive transformation utilizing gold. Applied Physics Letters, 58 (11). 1196-1198 doi:10.1063/1.104363
Tsiaoussis, I., Khranovskyy, V., Dimitrakopulos, G. P., Stoemenos, J., Yakimova, R., Pecz, B. (2011) Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates. Journal of Applied Physics, 109 (4). 43507 doi:10.1063/1.3549140
Miyasaka, Mitsutoshi, Makihira, Kenji, Asano, Tanemasa, Polychroniadis, Efstathios, Stoemenos, John (2002) In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films. Applied Physics Letters, 80 (6). 944-946 doi:10.1063/1.1447014
 
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