Hallam, Brett, Abbott, Malcolm, Nampalli, Nitin, Hamer, Phill, Wenham, Stuart (2016) Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model. Journal of Applied Physics, 119 (6). 65701pp. doi:10.1063/1.4941387
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model | ||
| Journal | Journal of Applied Physics | ||
| Authors | Hallam, Brett | Author | |
| Abbott, Malcolm | Author | ||
| Nampalli, Nitin | Author | ||
| Hamer, Phill | Author | ||
| Wenham, Stuart | Author | ||
| Year | 2016 (February 14) | Volume | 119 |
| Issue | 6 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4941387Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5204880 | Long-form Identifier | mindat:1:5:5204880:9 |
| GUID | 0 | ||
| Full Reference | Hallam, Brett, Abbott, Malcolm, Nampalli, Nitin, Hamer, Phill, Wenham, Stuart (2016) Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model. Journal of Applied Physics, 119 (6). 65701pp. doi:10.1063/1.4941387 | ||
| Plain Text | Hallam, Brett, Abbott, Malcolm, Nampalli, Nitin, Hamer, Phill, Wenham, Stuart (2016) Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model. Journal of Applied Physics, 119 (6). 65701pp. doi:10.1063/1.4941387 | ||
| In | (2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
