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Flemban, T. H., Sequeira, M. C., Zhang, Z., Venkatesh, S., Alves, E., Lorenz, K., Roqan, I. S. (2016) Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films. Journal of Applied Physics, 119 (6). 65301pp. doi:10.1063/1.4941434

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Reference TypeJournal (article/letter/editorial)
TitleIdentifying the influence of the intrinsic defects in Gd-doped ZnO thin-films
JournalJournal of Applied Physics
AuthorsFlemban, T. H.Author
Sequeira, M. C.Author
Zhang, Z.Author
Venkatesh, S.Author
Alves, E.Author
Lorenz, K.Author
Roqan, I. S.Author
Year2016 (February 14)Volume119
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4941434Search in ResearchGate
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Mindat Ref. ID5204883Long-form Identifiermindat:1:5:5204883:6
GUID0
Full ReferenceFlemban, T. H., Sequeira, M. C., Zhang, Z., Venkatesh, S., Alves, E., Lorenz, K., Roqan, I. S. (2016) Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films. Journal of Applied Physics, 119 (6). 65301pp. doi:10.1063/1.4941434
Plain TextFlemban, T. H., Sequeira, M. C., Zhang, Z., Venkatesh, S., Alves, E., Lorenz, K., Roqan, I. S. (2016) Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films. Journal of Applied Physics, 119 (6). 65301pp. doi:10.1063/1.4941434
In(2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing

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