Vote for your favorite mineral in #MinCup25! - Topaz vs. Kyanite
It's a battle of high-pressure colourful beauties of #topaz vs #kyanite. Which can stand the heat of round 1?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Laurent, Matthew A., Gupta, Geetak, Suntrup, Donald J., DenBaars, Steven P., Mishra, Umesh K. (2016) Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes. Journal of Applied Physics, 119 (6). 64501pp. doi:10.1063/1.4941531

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleBarrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes
JournalJournal of Applied Physics
AuthorsLaurent, Matthew A.Author
Gupta, GeetakAuthor
Suntrup, Donald J.Author
DenBaars, Steven P.Author
Mishra, Umesh K.Author
Year2016 (February 14)Volume119
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4941531Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5204885Long-form Identifiermindat:1:5:5204885:4
GUID0
Full ReferenceLaurent, Matthew A., Gupta, Geetak, Suntrup, Donald J., DenBaars, Steven P., Mishra, Umesh K. (2016) Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes. Journal of Applied Physics, 119 (6). 64501pp. doi:10.1063/1.4941531
Plain TextLaurent, Matthew A., Gupta, Geetak, Suntrup, Donald J., DenBaars, Steven P., Mishra, Umesh K. (2016) Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes. Journal of Applied Physics, 119 (6). 64501pp. doi:10.1063/1.4941531
In(2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Suntrup, Donald J., Gupta, Geetak, Li, Haoran, Keller, Stacia, Mishra, Umesh K. (2015) Barrier height fluctuations in InGaN polarization dipole diodes. Applied Physics Letters, 107 (17). 173503pp. doi:10.1063/1.4934876
Laurent, Matthew A., Gupta, Geetak, Wienecke, Steven, Muqtadir, Azim A., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K. (2014) Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 116 (18). 183704pp. doi:10.1063/1.4901834
Suntrup, Donald J., Gupta, Geetak, Li, Haoran, Keller, Stacia, Mishra, Umesh K. (2014) Measurement of the hot electron mean free path and the momentum relaxation rate in GaN. Applied Physics Letters, 105 (26). 263506pp. doi:10.1063/1.4905367
Chavan, Tanmay; Suntrup, Donald J.; Mishra, Umesh K. (2025) Understanding extracted Richardson constant in Schottky diodes using Ni/GaN as a case study. Journal of Applied Physics, 138 (1). doi:10.1063/5.0270045
Lu, Jing, Denninghoff, Dan, Yeluri, Ramya, Lal, Shalini, Gupta, Geetak, Laurent, Matthew, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K. (2013) Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition. Applied Physics Letters, 102 (23). 232104pp. doi:10.1063/1.4809997
Gupta, Chirag, Enatsu, Yuuki, Gupta, Geetak, Keller, Stacia, Mishra, Umesh K. (2016) High breakdown voltage p-n diodes on GaN on sapphire by MOCVD. physica status solidi (a), 213 (4). 878-882 doi:10.1002/pssa.201532554
Kolluri, Seshadri, Keller, Stacia, Brown, David, Gupta, Geetak, Rajan, Siddharth, DenBaars, Steven P., Mishra, Umesh K. (2010) Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates. Journal of Applied Physics, 108 (7). 74502pp. doi:10.1063/1.3488641
Lu, Jing, Zheng, Xun, Guidry, Matthew, Denninghoff, Dan, Ahmadi, Elahe, Lal, Shalini, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K. (2014) Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors. Applied Physics Letters, 104 (9). 92107pp. doi:10.1063/1.4867508
Kolluri, Seshadri, Keller, Stacia, Brown, David, Gupta, Geetak, Mishra, Umesh K., DenBaars, Steven P., Rajan, Siddharth (2010) Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)]. Journal of Applied Physics, 108 (11). 119902pp. doi:10.1063/1.3514587
Pasayat, Shubhra S., Gupta, Chirag, Wong, Matthew S., Wang, Yifan, Nakamura, Shuji, Denbaars, Steven P., Keller, Stacia, Mishra, Umesh K. (2020) Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates. Applied Physics Letters, 116 (11). 111101pp. doi:10.1063/5.0001480
Chichibu, Shigefusa F., Uedono, Akira, Onuma, Takeyoshi, DenBaars, Steven P., Mishra, Umesh K., Speck, James S., Nakamura, Shuji (2008) Impact of Point Defects on the Luminescence Properties of (Al,Ga)N. Materials Science Forum, 590. 233-248 doi:10.4028/www.scientific.net/msf.590.233
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 13, 2025 10:06:49
Go to top of page