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Li, Y., Hou, Z. T., Li, Y. R., Su, H. L., Liu, C. C., Wang, M. (2017) Stability and electronic structure of defect complexes in Gd-doped GaN: First-principles calculations. Journal of Applied Physics, 122 (2). 23901pp. doi:10.1063/1.4993452

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Reference TypeJournal (article/letter/editorial)
TitleStability and electronic structure of defect complexes in Gd-doped GaN: First-principles calculations
JournalJournal of Applied Physics
AuthorsLi, Y.Author
Hou, Z. T.Author
Li, Y. R.Author
Su, H. L.Author
Liu, C. C.Author
Wang, M.Author
Year2017 (July 14)Volume122
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4993452Search in ResearchGate
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Mindat Ref. ID5207908Long-form Identifiermindat:1:5:5207908:5
GUID0
Full ReferenceLi, Y., Hou, Z. T., Li, Y. R., Su, H. L., Liu, C. C., Wang, M. (2017) Stability and electronic structure of defect complexes in Gd-doped GaN: First-principles calculations. Journal of Applied Physics, 122 (2). 23901pp. doi:10.1063/1.4993452
Plain TextLi, Y., Hou, Z. T., Li, Y. R., Su, H. L., Liu, C. C., Wang, M. (2017) Stability and electronic structure of defect complexes in Gd-doped GaN: First-principles calculations. Journal of Applied Physics, 122 (2). 23901pp. doi:10.1063/1.4993452
In(2017, July) Journal of Applied Physics Vol. 122 (2) AIP Publishing

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