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Luo, Jinping, Alateeqi, Abdullah, Liu, Lijun, Sinno, Talid (2017) Atomistic simulations of carbon diffusion and segregation in liquid silicon. Journal of Applied Physics, 122 (22). 225705pp. doi:10.1063/1.5006944

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Reference TypeJournal (article/letter/editorial)
TitleAtomistic simulations of carbon diffusion and segregation in liquid silicon
JournalJournal of Applied Physics
AuthorsLuo, JinpingAuthor
Alateeqi, AbdullahAuthor
Liu, LijunAuthor
Sinno, TalidAuthor
Year2017 (December 14)Volume122
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.5006944Search in ResearchGate
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Mindat Ref. ID5208049Long-form Identifiermindat:1:5:5208049:8
GUID0
Full ReferenceLuo, Jinping, Alateeqi, Abdullah, Liu, Lijun, Sinno, Talid (2017) Atomistic simulations of carbon diffusion and segregation in liquid silicon. Journal of Applied Physics, 122 (22). 225705pp. doi:10.1063/1.5006944
Plain TextLuo, Jinping, Alateeqi, Abdullah, Liu, Lijun, Sinno, Talid (2017) Atomistic simulations of carbon diffusion and segregation in liquid silicon. Journal of Applied Physics, 122 (22). 225705pp. doi:10.1063/1.5006944
In(2017, December) Journal of Applied Physics Vol. 122 (22) AIP Publishing

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Luo, Jinping, Alateeqi, Abdullah, Liu, Lijun, Sinno, Talid (2019) Carbon solubility in liquid silicon: A computational analysis across empirical potentials. The Journal of Chemical Physics, 150 (14). 144503pp. doi:10.1063/1.5088495
Luo, Jinping, Cheng, Yunjie, Zhou, Chenyang, Sinno, Talid, Liu, Lijun (2021) A general approach for calculating melt–solid impurity segregation coefficients based on thermodynamic integration. Journal of Applied Physics, 130 (2) 25702pp. doi:10.1063/5.0051245
Chuang, Claire Y., Sattler, Andreas, Sinno, Talid (2015) Thermodynamic and morphological analysis of large silicon self-interstitial clusters using atomistic simulations. Journal of Applied Physics, 117 (13). 135706pp. doi:10.1063/1.4917049
Käshammer, Peter, Sinno, Talid (2015) A mechanistic study of impurity segregation at silicon grain boundaries. Journal of Applied Physics, 118 (9). 95301pp. doi:10.1063/1.4929637
Prasad, Manish, Sinno, Talid (2002) Atomistic-to-continuum description of vacancy cluster properties in crystalline silicon. Applied Physics Letters, 80 (11). 1951-1953 doi:10.1063/1.1461050
Kapur, Sumeet S., Sinno, Talid (2008) Entropic origins of stability in silicon interstitial clusters. Applied Physics Letters, 93 (22). 221911pp. doi:10.1063/1.3042096
Sinno, Talid, Jiang, Z. Kurt, Brown, Robert A. (1996) Atomistic simulation of point defects in silicon at high temperature. Applied Physics Letters, 68 (21). 3028-3030 doi:10.1063/1.115566
Käshammer, Peter, Sinno, Talid (2013) Interactions of twin boundaries with intrinsic point defects and carbon in silicon. Journal of Applied Physics, 114 (8). 83505pp. doi:10.1063/1.4819172
Luo, Jinping, Zhou, Chenyang, Cheng, Yunjie, Liu, Lijun (2020) Assessing the EDIP potential for atomic simulation of carbon diffusion, segregation and solubility in silicon melt. Journal of Crystal Growth, 546. 125785pp. doi:10.1016/j.jcrysgro.2020.125785
Yang, Yi, Sattler, Andreas, Sinno, Talid (2019) Data-assisted physical modeling of oxygen precipitation in silicon wafers. Journal of Applied Physics, 125 (16). 165705pp. doi:10.1063/1.5090121
Luo, Jinping, Zhou, Chenyang, Li, Qihang, Cheng, Yunjie, Liu, Lijun (2022) Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt. Journal of Crystal Growth, 580. 126476pp. doi:10.1016/j.jcrysgro.2021.126476
 
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