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Kogo, Gilbert, Lee, Harold, Ibrahim, Adem H., Bo, Xiao, Pradhan, Sangram K., Bahoura, Messaoud (2018) Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique. Journal of Applied Physics, 124 (16). 165106pp. doi:10.1063/1.5046686

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Reference TypeJournal (article/letter/editorial)
TitleHighly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique
JournalJournal of Applied Physics
AuthorsKogo, GilbertAuthor
Lee, HaroldAuthor
Ibrahim, Adem H.Author
Bo, XiaoAuthor
Pradhan, Sangram K.Author
Bahoura, MessaoudAuthor
Year2018 (October 28)Volume124
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.5046686Search in ResearchGate
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Mindat Ref. ID5209968Long-form Identifiermindat:1:5:5209968:1
GUID0
Full ReferenceKogo, Gilbert, Lee, Harold, Ibrahim, Adem H., Bo, Xiao, Pradhan, Sangram K., Bahoura, Messaoud (2018) Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique. Journal of Applied Physics, 124 (16). 165106pp. doi:10.1063/1.5046686
Plain TextKogo, Gilbert, Lee, Harold, Ibrahim, Adem H., Bo, Xiao, Pradhan, Sangram K., Bahoura, Messaoud (2018) Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique. Journal of Applied Physics, 124 (16). 165106pp. doi:10.1063/1.5046686
In(2018, October) Journal of Applied Physics Vol. 124 (16) AIP Publishing

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