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Samanta, Atanu, Grinberg, Ilya (2018) Investigation of Si/3C-SiC interface properties using classical molecular dynamics. Journal of Applied Physics, 124 (17). 175110pp. doi:10.1063/1.5042203

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of Si/3C-SiC interface properties using classical molecular dynamics
JournalJournal of Applied Physics
AuthorsSamanta, AtanuAuthor
Grinberg, IlyaAuthor
Year2018 (November 7)Volume124
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5042203Search in ResearchGate
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Mindat Ref. ID5210019Long-form Identifiermindat:1:5:5210019:0
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Full ReferenceSamanta, Atanu, Grinberg, Ilya (2018) Investigation of Si/3C-SiC interface properties using classical molecular dynamics. Journal of Applied Physics, 124 (17). 175110pp. doi:10.1063/1.5042203
Plain TextSamanta, Atanu, Grinberg, Ilya (2018) Investigation of Si/3C-SiC interface properties using classical molecular dynamics. Journal of Applied Physics, 124 (17). 175110pp. doi:10.1063/1.5042203
In(2018, November) Journal of Applied Physics Vol. 124 (17) AIP Publishing

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Chavoshi, Saeed Zare, Xu, Shuozhi (2018) Tension-compression asymmetry in plasticity of nanotwinned 3C-SiC nanocrystals. Journal of Applied Physics, 124 (9). 95103pp. doi:10.1063/1.5046949
Gundimeda, Abhiram, Rostami, Mohammadreza, Frentrup, Martin, Hinz, Alexander, Kappers, Menno J, Wallis, David J, Oliver, Rachel A (2022) Influence of Al x Ga1−x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) Journal of Physics D: Applied Physics, 55 (17) 175110pp. doi:10.1088/1361-6463/ac4c58
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Ishida, Y., Takahashi, T., Okumura, H., Yoshida, S. (2003) Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates. Journal of Applied Physics, 94 (7). 4676-4689 doi:10.1063/1.1605258
 
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