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Lechaux, Y., Fadjie-Djomkam, A. B., Pastorek, M., Wallart, X., Bollaert, S., Wichmann, N. (2018) Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process. Journal of Applied Physics, 124 (17). 175302pp. doi:10.1063/1.5049571

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Reference TypeJournal (article/letter/editorial)
TitleStudy of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process
JournalJournal of Applied Physics
AuthorsLechaux, Y.Author
Fadjie-Djomkam, A. B.Author
Pastorek, M.Author
Wallart, X.Author
Bollaert, S.Author
Wichmann, N.Author
Year2018 (November 7)Volume124
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5049571Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5210030Long-form Identifiermindat:1:5:5210030:3
GUID0
Full ReferenceLechaux, Y., Fadjie-Djomkam, A. B., Pastorek, M., Wallart, X., Bollaert, S., Wichmann, N. (2018) Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process. Journal of Applied Physics, 124 (17). 175302pp. doi:10.1063/1.5049571
Plain TextLechaux, Y., Fadjie-Djomkam, A. B., Pastorek, M., Wallart, X., Bollaert, S., Wichmann, N. (2018) Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process. Journal of Applied Physics, 124 (17). 175302pp. doi:10.1063/1.5049571
In(2018, November) Journal of Applied Physics Vol. 124 (17) AIP Publishing

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Lechaux, Y., Fadjie-Djomkam, A. B., Bollaert, S., Wichmann, N. (2016) Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors. Applied Physics Letters, 109 (13). 131602pp. doi:10.1063/1.4963656
Lechaux, Y, Fadjie, A, Bollaert, S, Talbo, V, Mateos, J, González, T, Vasallo, B G, Wichmann, N (2015) Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs. Journal of Physics: Conference Series, 647. 12062pp. doi:10.1088/1742-6596/647/1/012062
Vasallo, B. G., González, T., Talbo, V., Lechaux, Y., Wichmann, N., Bollaert, S., Mateos, J. (2018) Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis. Journal of Applied Physics, 123 (3). 34501pp. doi:10.1063/1.5007858
Wang, Y., Ruterana, P., Desplanque, L., El Kazzi, S., Wallart, X. (2011) Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness. Journal of Applied Physics, 109 (2). 23509pp. doi:10.1063/1.3532053
Talbo, V, Mateos, J, González, T, Lechaux, Y, Wichmann, N, Bollaert, S, Vasallo, B G (2015) Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs. Journal of Physics: Conference Series, 647. 12056pp. doi:10.1088/1742-6596/647/1/012056
Baker, L., Cavanagh, A. S., Seghete, D., George, S. M., Mackus, A. J. M., Kessels, W. M. M., Liu, Z. Y., Wagner, F. T. (2011) Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma. Journal of Applied Physics, 109 (8). 84333pp. doi:10.1063/1.3555091
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Godet, C., Fadjie-Djomkam, A. B., Ababou-Girard, S., Solal, F. (2010) Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions. Applied Physics Letters, 97 (13). 132105pp. doi:10.1063/1.3493650
Milojevic, M., Hinkle, C. L., Aguirre-Tostado, F. S., Kim, H. C., Vogel, E. M., Kim, J., Wallace, R. M. (2008) Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces. Applied Physics Letters, 93 (25). 252905pp. doi:10.1063/1.3054348
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