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Noma, Taishi, Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa (2018) Modeling and analysis of I-V hysteresis behaviors caused by defects in tin perovskite thin films. Journal of Applied Physics, 124 (17). 175501pp. doi:10.1063/1.5050557

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Reference TypeJournal (article/letter/editorial)
TitleModeling and analysis of I-V hysteresis behaviors caused by defects in tin perovskite thin films
JournalJournal of Applied Physics
AuthorsNoma, TaishiAuthor
Taguchi, DaiAuthor
Manaka, TakaakiAuthor
Iwamoto, MitsumasaAuthor
Year2018 (November 7)Volume124
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5050557Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5210040Long-form Identifiermindat:1:5:5210040:0
GUID0
Full ReferenceNoma, Taishi, Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa (2018) Modeling and analysis of I-V hysteresis behaviors caused by defects in tin perovskite thin films. Journal of Applied Physics, 124 (17). 175501pp. doi:10.1063/1.5050557
Plain TextNoma, Taishi, Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa (2018) Modeling and analysis of I-V hysteresis behaviors caused by defects in tin perovskite thin films. Journal of Applied Physics, 124 (17). 175501pp. doi:10.1063/1.5050557
In(2018, November) Journal of Applied Physics Vol. 124 (17) AIP Publishing

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