Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., Van Ginhoven, Renee M. (2018) Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels. Journal of Applied Physics, 124 (18). 184501pp. doi:10.1063/1.5045668

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
JournalJournal of Applied Physics
AuthorsAnders, Mark A.Author
Lenahan, Patrick M.Author
Edwards, Arthur H.Author
Schultz, Peter A.Author
Van Ginhoven, Renee M.Author
Year2018 (November 14)Volume124
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5045668Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5210059Long-form Identifiermindat:1:5:5210059:8
GUID0
Full ReferenceAnders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., Van Ginhoven, Renee M. (2018) Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels. Journal of Applied Physics, 124 (18). 184501pp. doi:10.1063/1.5045668
Plain TextAnders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., Van Ginhoven, Renee M. (2018) Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels. Journal of Applied Physics, 124 (18). 184501pp. doi:10.1063/1.5045668
In(2018, November) Journal of Applied Physics Vol. 124 (18) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Anders, M. A., Lenahan, P. M., Lelis, A. J. (2016) Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?. Applied Physics Letters, 109 (14). 142106pp. doi:10.1063/1.4963708
Cochrane, C. J., Lenahan, P. M., Lelis, A. J. (2013) The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance. Applied Physics Letters, 102 (19). 193507pp. doi:10.1063/1.4805355
Haasmann, D., Dimitrijev, S. (2013) Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC. Applied Physics Letters, 103 (11). 113506pp. doi:10.1063/1.4821362
Weger, M., Kuegler, J., Nelhiebel, M., Moser, M., Bockstedte, M., Pobegen, G. (2024) Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors. Journal of Applied Physics, 136 (3) doi:10.1063/5.0203724
Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J., Anders, M. A. (2019) Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 126 (14). 145702pp. doi:10.1063/1.5120704
Anders, Mark A., Lenahan, Patrick M., Lelis, Aivars J. (2018) The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping. Materials Science Forum, 924. 469-472 doi:10.4028/www.scientific.net/msf.924.469
Meyer, David J., Lenahan, Patrick M., Lelis, Aivars J. (2005) Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination. Applied Physics Letters, 86 (2). 23503pp. doi:10.1063/1.1851592
Anders, M. A., Lenahan, P. M., Harmon, N. J., Flatté, M. E. (2020) A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping. Journal of Applied Physics, 128 (24) 244501pp. doi:10.1063/5.0027214
Fiorenza, Patrick, La Magna, Antonino, Vivona, Marilena, Roccaforte, Fabrizio (2016) Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements. Applied Physics Letters, 109 (1). 12102pp. doi:10.1063/1.4955465
Poggi, A., Moscatelli, F., Solmi, S., Armigliato, A., Belsito, L., Nipoti, R. (2010) Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel. Journal of Applied Physics, 107 (4). 44506pp. doi:10.1063/1.3290975
Pribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 23, 2025 00:51:45
Go to top of page