Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

El Kazzi, S., Alian, A., Hsu, B., Favia, P., Merckling, C., Lu, W., del Alamo, J. A., Collaert, N. (2018) Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices. Journal of Applied Physics, 124 (19). 195703pp. doi:10.1063/1.5049900

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices
JournalJournal of Applied Physics
AuthorsEl Kazzi, S.Author
Alian, A.Author
Hsu, B.Author
Favia, P.Author
Merckling, C.Author
Lu, W.Author
del Alamo, J. A.Author
Collaert, N.Author
Year2018 (November 21)Volume124
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.5049900Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5210096Long-form Identifiermindat:1:5:5210096:9
GUID0
Full ReferenceEl Kazzi, S., Alian, A., Hsu, B., Favia, P., Merckling, C., Lu, W., del Alamo, J. A., Collaert, N. (2018) Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices. Journal of Applied Physics, 124 (19). 195703pp. doi:10.1063/1.5049900
Plain TextEl Kazzi, S., Alian, A., Hsu, B., Favia, P., Merckling, C., Lu, W., del Alamo, J. A., Collaert, N. (2018) Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices. Journal of Applied Physics, 124 (19). 195703pp. doi:10.1063/1.5049900
In(2018, November) Journal of Applied Physics Vol. 124 (19) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, W., del Alamo, J.A., Collaert, N., Merckling, C. (2018) Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode. Journal of Crystal Growth, 484. 86-91 doi:10.1016/j.jcrysgro.2017.12.035
Ramesh, S., Ivanov, Ts., Sibaja-Hernandez, A., Alian, A., Camerotto, E., Milenin, A., Pinna, N., El Kazzi, S., Lin, D., Lagrain, P., Favia, P., Bender, H., Collaert, N., De Meyer, K. (2022) Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling. Journal of Applied Physics, 132 (2) 24302 doi:10.1063/5.0092535
Hsu, Po-Chun (Brent), Simoen, Eddy, Merckling, Clement, Eneman, Geert, Mols, Yves, Alian, AliReza, Langer, Robert, Collaert, Nadine, Heyns, Marc (2018) Bandlike and localized states of extended defects in n-type In0.53Ga0.47As. Journal of Applied Physics, 124 (16). 165707pp. doi:10.1063/1.5046827
El Kazzi, S., Smets, Q., Ezzedini, M., Rooyackers, R., Verhulst, A., Douhard, B., Bender, H., Collaert, N., Merckling, C., Heyns, M.M, Thean, A. (2015) Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions. Journal of Crystal Growth, 424. 62-67 doi:10.1016/j.jcrysgro.2015.05.004
(Brent) Hsu, P C, Simoen, E, Eneman, G, Merckling, C, Alian, A, Langer, R, Collaert, N, Heyns, M (2019) Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction. Journal of Physics: Conference Series, 1190. 12014pp. doi:10.1088/1742-6596/1190/1/012014
El Kazzi, S., Desplanque, L., Wallart, X., Wang, Y., Ruterana, P. (2012) Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP. Journal of Applied Physics, 111 (12). 123506pp. doi:10.1063/1.4729548
Hsu, Po-Chun (Brent), Simoen, Eddy, Merckling, Clement, Eneman, Geert, Mols, Yves, Han, Han, Alian, AliReza, Collaert, Nadine, Heyns, Marc (2019) The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As. Journal of Physics D: Applied Physics, 52. 485102pp. doi:10.1088/1361-6463/ab3eca
El Kazzi, S., Desplanque, L., Coinon, C., Wang, Y., Ruterana, P., Wallart, X. (2010) GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP. Applied Physics Letters, 97 (19). 192111pp. doi:10.1063/1.3515867
Yoshida, S., Lin, D., Vais, A., Alian, A., Franco, J., El Kazzi, S., Mols, Y., Miyanami, Y., Nakazawa, M., Collaert, N., Watanabe, H., Thean, A. (2016) Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks. Applied Physics Letters, 109 (17). 172101pp. doi:10.1063/1.4965854
Borg, B. Mattias, Ek, Martin, Ganjipour, Bahram, Dey, Anil W., Dick, Kimberly A., Wernersson, Lars-Erik, Thelander, Claes (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices. Applied Physics Letters, 101 (4). 43508pp. doi:10.1063/1.4739082
Desplanque, L., El Kazzi, S., Coinon, C., Ziegler, S., Kunert, B., Beyer, A., Volz, K., Stolz, W., Wang, Y., Ruterana, P., Wallart, X. (2012) Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer. Applied Physics Letters, 101 (14). 142111pp. doi:10.1063/1.4758292
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 27, 2025 10:06:07
Go to top of page