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Ingebrigtsen, M. E., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Vines, L. (2019) Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Journal of Applied Physics, 125 (18). 185706pp. doi:10.1063/1.5088655

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Reference TypeJournal (article/letter/editorial)
TitleGeneration and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures
JournalJournal of Applied Physics
AuthorsIngebrigtsen, M. E.Author
Kuznetsov, A. Yu.Author
Svensson, B. G.Author
Alfieri, G.Author
Mihaila, A.Author
Vines, L.Author
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5088655Search in ResearchGate
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Mindat Ref. ID5211045Long-form Identifiermindat:1:5:5211045:2
GUID0
Full ReferenceIngebrigtsen, M. E., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Vines, L. (2019) Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Journal of Applied Physics, 125 (18). 185706pp. doi:10.1063/1.5088655
Plain TextIngebrigtsen, M. E., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Vines, L. (2019) Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Journal of Applied Physics, 125 (18). 185706pp. doi:10.1063/1.5088655
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Vines, L. (2018) Iron and intrinsic deep level states in Ga2O3. Applied Physics Letters, 112 (4). 42104pp. doi:10.1063/1.5020134
Alfieri, G., Mihaila, A., Godignon, P., Varley, J. B., Vines, L. (2021) Deep level study of chlorine-based dry etched β − Ga2O3. Journal of Applied Physics, 130 (2) 25701pp. doi:10.1063/5.0050416
Ingebrigtsen, Mads E., Vines, Lasse, Alfieri, Giovanni, Mihaila, Andrei, Badstübner, Uwe, Svensson, Bengt Gunnar, Kuznetsov, Andrej (2017) Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects. Materials Science Forum, 897. 755-758 doi:10.4028/www.scientific.net/msf.897.755
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Alfieri, G., Monakhov, E. V., Svensson, B. G., Linnarsson, M. K. (2005) Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide. Journal of Applied Physics, 98 (4). 43518pp. doi:10.1063/1.2009816
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