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Jay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Vast, Nathalie (2019) Theoretical phase diagram of boron carbide from ambient to high pressure and temperature. Journal of Applied Physics, 125 (18). 185902pp. doi:10.1063/1.5091000

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Reference TypeJournal (article/letter/editorial)
TitleTheoretical phase diagram of boron carbide from ambient to high pressure and temperature
JournalJournal of Applied Physics
AuthorsJay, AntoineAuthor
Hardouin Duparc, OlivierAuthor
Sjakste, JelenaAuthor
Vast, NathalieAuthor
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5091000Search in ResearchGate
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Mindat Ref. ID5211054Long-form Identifiermindat:1:5:5211054:0
GUID0
Full ReferenceJay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Vast, Nathalie (2019) Theoretical phase diagram of boron carbide from ambient to high pressure and temperature. Journal of Applied Physics, 125 (18). 185902pp. doi:10.1063/1.5091000
Plain TextJay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Vast, Nathalie (2019) Theoretical phase diagram of boron carbide from ambient to high pressure and temperature. Journal of Applied Physics, 125 (18). 185902pp. doi:10.1063/1.5091000
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Jay, Antoine, Vast, Nathalie, Sjakste, Jelena, Duparc, Olivier Hardouin (2014) Carbon-rich icosahedral boron carbide designed from first principles. Applied Physics Letters, 105 (3). 31914pp. doi:10.1063/1.4890841
Cho, Yeonsoo, Sjakste, Jelena, Hardouin Duparc, Olivier, Vast, Nathalie (2024) Thermodynamical stability of carbon-based defects in α boron from first principles. Solid State Sciences, 154. 107610 doi:10.1016/j.solidstatesciences.2024.107610
Raucoules, Roman, Vast, Nathalie, Betranhandy, Emmanuel, Sjakste, Jelena (2011) Mechanical properties of icosahedral boron carbide explained from first principles. Physical Review B, 84 (1) doi:10.1103/physrevb.84.014112
Vast, Nathalie, Sjakste, Jelena, Betranhandy, Emmanuel (2009) Boron carbides from first principles. Journal of Physics: Conference Series, 176. 12002pp. doi:10.1088/1742-6596/176/1/012002
Betranhandy, Emmanuel, Vast, Nathalie, Sjakste, Jelena (2012) Ab initio study of defective chains in icosahedral boron carbide B4C. Solid State Sciences, 14 (11) 1683-1687 doi:10.1016/j.solidstatesciences.2012.07.002
Sjakste, Jelena, Tyuterev, Valeriy, Vast, Nathalie (2006) Ab initiostudy ofΓ−Xintervalley scattering in GaAs under pressure. Physical Review B, 74 (23) doi:10.1103/physrevb.74.235216
Tyuterev, Valeriy, Sjakste, Jelena, Vast, Nathalie (2010) Theoretical intrinsic lifetime limit of shallow donor states in silicon. Physical Review B, 81 (24) doi:10.1103/physrevb.81.245212
Awasthi, Amnaya P., Subhash, Ghatu (2019) High-pressure deformation and amorphization in boron carbide. Journal of Applied Physics, 125 (21). 215901pp. doi:10.1063/1.5091795
Sjakste, Jelena, Sen, Raja, Vast, Nathalie, Saint-Martin, Jerome, Ghanem, Mohammad, Dollfus, Philippe, Murphy-Armando, Felipe, Kanasaki, Junichi (2025) Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions. The Journal of Chemical Physics, 162 (6). doi:10.1063/5.0245834
Tanimura, Hiroshi, Kanasaki, Jun'ichi, Tanimura, Katsumi, Sjakste, Jelena, Vast, Nathalie (2019) Ultrafast relaxation dynamics of highly excited hot electrons in silicon. Physical Review B, 100 (3) doi:10.1103/physrevb.100.035201
Sjakste, Jelena, Vast, Nathalie, Barbarino, Giuliana, Calandra, Matteo, Mauri, Francesco, Kanasaki, Junichi, Tanimura, Hiroshi, Tanimura, Katsumi (2018) Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence. Physical Review B, 97 (6) doi:10.1103/physrevb.97.064302
 
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