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Vaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R. (2019) Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics, 125 (18). 185704pp. doi:10.1063/1.5091759

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Reference TypeJournal (article/letter/editorial)
TitleIdentification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
JournalJournal of Applied Physics
AuthorsVaqueiro-Contreras, MichelleAuthor
Markevich, Vladimir P.Author
Coutinho, JoséAuthor
Santos, PauloAuthor
Crowe, Iain F.Author
Halsall, Matthew P.Author
Hawkins, IanAuthor
Lastovskii, Stanislau B.Author
Murin, Leonid I.Author
Peaker, Anthony R.Author
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5091759Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5211056Long-form Identifiermindat:1:5:5211056:8
GUID0
Full ReferenceVaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R. (2019) Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics, 125 (18). 185704pp. doi:10.1063/1.5091759
Plain TextVaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R. (2019) Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics, 125 (18). 185704pp. doi:10.1063/1.5091759
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, De Guzman, Joyce T., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R. (2019) Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem. physica status solidi (a), 216 (17). 1900315pp. doi:10.1002/pssa.201900315
de Guzman, Joyce Ann T., Markevich, Vladimir P., Hawkins, Ian D., Coutinho, José, Ayedh, Hussein M., Binns, Jeff, Abrosimov, Nikolay V., Lastovskii, Stanislau B., Crowe, Iain F., Halsall, Matthew P., Peaker, Anthony R. (2021) Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer. Journal of Applied Physics, 130 (24) 245703pp. doi:10.1063/5.0076980
Santos, Paulo, Coutinho, José, Öberg, Sven, Vaqueiro‐Contreras, Michelle, Markevich, Vladimir P., Halsall, Matthew P., Peaker, Anthony R. (2017) Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si. physica status solidi (a), 214 (7). 1700309pp. doi:10.1002/pssa.201700309
Markevich, V. P., Vaqueiro-Contreras, M., Lastovskii, S. B., Murin, L. I., Halsall, M. P., Peaker, A. R. (2018) Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques. Journal of Applied Physics, 124 (22). 225703pp. doi:10.1063/1.5053805
Vaqueiro-Contreras, M., Markevich, V. P., Mullins, J., Halsall, M. P., Murin, L. I., Falster, R., Binns, J., Coutinho, J., Peaker, A. R. (2018) Lifetime degradation of n-type Czochralski silicon after hydrogenation. Journal of Applied Physics, 123 (16). 161415pp. doi:10.1063/1.5011351
Lastovskii, Stanislau B., Gusakov, Vasilii E., Markevich, Vladimir P., Peaker, Anthony R., Yakushevich, Hanna S., Korshunov, Fedor P., Murin, Leonid I. (2017) Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics. physica status solidi (a), 214 (7). 1700262pp. doi:10.1002/pssa.201700262
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Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jabłoński, Jarosław, Murphy, John D., Halsall, Matthew P., Peaker, Anthony R. (2018) Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states. Journal of Applied Physics, 124 (3). 35701pp. doi:10.1063/1.5036718
Murin, L. I., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Hamilton, B., Monakhov, E., Svensson, B. G., Lindström, J. L., Santos, P., Coutinho, J., Carvalho, A. (2011) The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?. Applied Physics Letters, 98 (18). 182101pp. doi:10.1063/1.3584138
Markevich, V. P., Peaker, A. R., Hamilton, B., Lastovskii, S. B., Murin, L. I. (2014) Donor levels of the divacancy-oxygen defect in silicon. Journal of Applied Physics, 115 (1). 12004pp. doi:10.1063/1.4837995
 
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