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Skachkov, Dmitry, Lambrecht, Walter R. L., von Bardeleben, Hans Jürgen, Gerstmann, Uwe, Ho, Quoc Duy, Deák, Peter (2019) Computational identification of Ga-vacancy related electron paramagnetic resonance centers in β-Ga2O3. Journal of Applied Physics, 125 (18). 185701pp. doi:10.1063/1.5092626

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Reference TypeJournal (article/letter/editorial)
TitleComputational identification of Ga-vacancy related electron paramagnetic resonance centers in β-Ga2O3
JournalJournal of Applied Physics
AuthorsSkachkov, DmitryAuthor
Lambrecht, Walter R. L.Author
von Bardeleben, Hans JürgenAuthor
Gerstmann, UweAuthor
Ho, Quoc DuyAuthor
Deák, PeterAuthor
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5092626Search in ResearchGate
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Mindat Ref. ID5211060Long-form Identifiermindat:1:5:5211060:1
GUID0
Full ReferenceSkachkov, Dmitry, Lambrecht, Walter R. L., von Bardeleben, Hans Jürgen, Gerstmann, Uwe, Ho, Quoc Duy, Deák, Peter (2019) Computational identification of Ga-vacancy related electron paramagnetic resonance centers in β-Ga2O3. Journal of Applied Physics, 125 (18). 185701pp. doi:10.1063/1.5092626
Plain TextSkachkov, Dmitry, Lambrecht, Walter R. L., von Bardeleben, Hans Jürgen, Gerstmann, Uwe, Ho, Quoc Duy, Deák, Peter (2019) Computational identification of Ga-vacancy related electron paramagnetic resonance centers in β-Ga2O3. Journal of Applied Physics, 125 (18). 185701pp. doi:10.1063/1.5092626
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Skachkov, Dmitry, Lambrecht, Walter R. L. (2019) Computational study of electron paramagnetic resonance parameters for Mg and Zn impurities in β-Ga2O3. Applied Physics Letters, 114 (20). 202102pp. doi:10.1063/1.5099396
Son, Nguyen Tien, Ho, Quoc Duy, Goto, Ken, Abe, Hiroshi, Ohshima, Takeshi, Monemar, Bo, Kumagai, Yoshinao, Frauenheim, Thomas, Deák, Peter (2020) Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3. Applied Physics Letters, 117 (3) 32101pp. doi:10.1063/5.0012579
Skachkov, Dmitry, Lambrecht, Walter R L, Dabsamut, Klichchupong, Boonchun, Adisak (2020) Computational study of electron paramagnetic resonance spectra for Li and Ga vacancies in LiGaO2. Journal of Physics D: Applied Physics, 53. 17pp. doi:10.1088/1361-6463/ab6f1c
von Bardeleben, Hans Jurgen; Cantin, Jean Louis (2025) High‐Frequency Electron Paramagnetic Resonance and Electron‐Nuclear Double Resonance Spectroscopy Study of the Ga Vacancy in β‐Ga2O3. physica status solidi (b), 262 (8). doi:10.1002/pssb.202400486
Ho, Quoc Duy, Frauenheim, Thomas, Deák, Peter (2018) Theoretical confirmation of the polaron model for the Mg acceptor in β-Ga2O3. Journal of Applied Physics, 124 (14). 145702pp. doi:10.1063/1.5049861
Ho, Quoc Duy, Frauenheim, Thomas, Deák, Peter (2018) Origin of photoluminescence in β−Ga2O3. Physical Review B, 97 (11) doi:10.1103/physrevb.97.115163
von Bardeleben, H. J., Cantin, J. L. (2020) Unusual conduction mechanism of n-type β-Ga2O3: A shallow donor electron paramagnetic resonance analysis. Journal of Applied Physics, 128 (12) 125702pp. doi:10.1063/5.0023546
Skachkov, Dmitry, Lambrecht, Walter R. L. (2020) Candidates for p-type doping of ZnGeN2. Journal of Applied Physics, 127 (7). 75707pp. doi:10.1063/1.5132338
von Bardeleben, H. J., Rauls, E., Gerstmann, U. (2020) Carbon vacancy-related centers in 3C -silicon carbide: Negative- U properties and structural transformation. Physical Review B, 101 (18) doi:10.1103/physrevb.101.184108
Zargaleh, S. A., von Bardeleben, H. J., Cantin, J. L., Gerstmann, U., Hameau, S., Eblé, B., Gao, Weibo (2018) Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H -SiC. Physical Review B, 98 (21) doi:10.1103/physrevb.98.214113
Deák, Peter, Duy Ho, Quoc, Seemann, Florian, Aradi, Bálint, Lorke, Michael, Frauenheim, Thomas (2017) Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β−Ga2O3. Physical Review B, 95 (7) doi:10.1103/physrevb.95.075208
 
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