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Kato, Kimihiko, Matsui, Hiroaki, Tabata, Hitoshi, Takenaka, Mitsuru, Takagi, Shinichi (2019) ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties. Journal of Applied Physics, 125 (19). 195701pp. doi:10.1063/1.5088893

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Reference TypeJournal (article/letter/editorial)
TitleZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties
JournalJournal of Applied Physics
AuthorsKato, KimihikoAuthor
Matsui, HiroakiAuthor
Tabata, HitoshiAuthor
Takenaka, MitsuruAuthor
Takagi, ShinichiAuthor
Year2019 (May 21)Volume125
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.5088893Search in ResearchGate
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Mindat Ref. ID5211085Long-form Identifiermindat:1:5:5211085:0
GUID0
Full ReferenceKato, Kimihiko, Matsui, Hiroaki, Tabata, Hitoshi, Takenaka, Mitsuru, Takagi, Shinichi (2019) ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties. Journal of Applied Physics, 125 (19). 195701pp. doi:10.1063/1.5088893
Plain TextKato, Kimihiko, Matsui, Hiroaki, Tabata, Hitoshi, Takenaka, Mitsuru, Takagi, Shinichi (2019) ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties. Journal of Applied Physics, 125 (19). 195701pp. doi:10.1063/1.5088893
In(2019, May) Journal of Applied Physics Vol. 125 (19) AIP Publishing

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Kato, Kimihiko, Matsui, Hiroaki, Tabata, Hitoshi, Takenaka, Mitsuru, Takagi, Shinichi (2018) TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing. Applied Physics Letters, 112 (16). 162105pp. doi:10.1063/1.5020080
Bae, Tae-Eon, Kato, Kimihiko, Suzuki, Ryota, Nakane, Ryosho, Takenaka, Mitsuru, Takagi, Shinichi (2018) Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors. Applied Physics Letters, 113 (6). 62103pp. doi:10.1063/1.5028529
Endo, Kiyoshi, Kato, Kimihiko, Takenaka, Mitsuru, Takagi, Shinichi (2019) Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/aafecf
Yokoyama, Masafumi, Yokoyama, Haruki, Takenaka, Mitsuru, Takagi, Shinichi (2019) InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding. Journal of Applied Physics, 125 (11). 114501pp. doi:10.1063/1.5049518
Kang, Min-Soo, Toprasertpong, Kasidit, Oka, Hiroshi, Mori, Takahiro, Takenaka, Mitsuru, Takagi, Shinichi (2024) Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures. Journal of Applied Physics, 136 (19). doi:10.1063/5.0233899
Ono, Yosuke, Matsui, Hiroaki, Tabata, Hitoshi (2012) Heteroepitaxial growth and characterization of ZnO films on Gd3Ga5O12 garnet substrates. Journal of Applied Physics, 112 (10). 103530pp. doi:10.1063/1.4767119
Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi (2019) Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile. Journal of Applied Physics, 126 (21). 214502pp. doi:10.1063/1.5121567
Sanjoh, Takaaki, Sekine, Naoki, Kato, Kimihiko, Takagi, Shinichi, Takenaka, Mitsuru (2019) Thermal properties of III–V on a SiC platform for photonic integrated circuits. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/aafd8b
Bae, Tae-Eon, Wakabayashi, Yuki, Nakane, Ryosho, Takenaka, Mitsuru, Takagi, Shinichi (2018) Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs. Japanese Journal of Applied Physics, 57 (4) 4 doi:10.7567/jjap.57.04fd11
Matsui, Hiroaki, Osone, Takamasa, Tabata, Hitoshi (2010) Band alignment and excitonic localization of ZnO/Cd0.08Zn0.92O quantum wells. Journal of Applied Physics, 107 (9). 93523pp. doi:10.1063/1.3359720
Iida, Ryo, Kim, Sang-Hyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Lee, Sang-Hoon, Takenaka, Mitsuru, Takagi, Shinichi (2011) Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 110 (12). 124505pp. doi:10.1063/1.3668120
 
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