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de Magalhães, C M S, dos Santos, L A P, Souza, D do N, Maia, A F (2010) Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam. Journal of Physics: Conference Series, 249. 12032pp. doi:10.1088/1742-6596/249/1/012032

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Reference TypeJournal (article/letter/editorial)
TitleEffect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam
JournalJournal of Physics: Conference Series
Authorsde Magalhães, C M SAuthor
dos Santos, L A PAuthor
Souza, D do NAuthor
Maia, A FAuthor
Year2010 (November 1)Volume249
PublisherIOP Publishing
DOIdoi:10.1088/1742-6596/249/1/012032Search in ResearchGate
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Mindat Ref. ID5231851Long-form Identifiermindat:1:5:5231851:3
GUID0
Full Referencede Magalhães, C M S, dos Santos, L A P, Souza, D do N, Maia, A F (2010) Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam. Journal of Physics: Conference Series, 249. 12032pp. doi:10.1088/1742-6596/249/1/012032
Plain Textde Magalhães, C M S, dos Santos, L A P, Souza, D do N, Maia, A F (2010) Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam. Journal of Physics: Conference Series, 249. 12032pp. doi:10.1088/1742-6596/249/1/012032
In(2010) Journal of Physics: Conference Series Vol. 249. IOP Publishing

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