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Aikawa, Y, Tsumura, K, Narita, T, Takayanagi, H, Ishiguro, R (2018) Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al. Journal of Physics: Conference Series, 969. 12057pp. doi:10.1088/1742-6596/969/1/012057

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Reference TypeJournal (article/letter/editorial)
TitleElectrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al
JournalJournal of Physics: Conference Series
AuthorsAikawa, YAuthor
Tsumura, KAuthor
Narita, TAuthor
Takayanagi, HAuthor
Ishiguro, RAuthor
Year2018 (March)Volume969
PublisherIOP Publishing
DOIdoi:10.1088/1742-6596/969/1/012057Search in ResearchGate
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Mindat Ref. ID5280318Long-form Identifiermindat:1:5:5280318:1
GUID0
Full ReferenceAikawa, Y, Tsumura, K, Narita, T, Takayanagi, H, Ishiguro, R (2018) Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al. Journal of Physics: Conference Series, 969. 12057pp. doi:10.1088/1742-6596/969/1/012057
Plain TextAikawa, Y, Tsumura, K, Narita, T, Takayanagi, H, Ishiguro, R (2018) Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al. Journal of Physics: Conference Series, 969. 12057pp. doi:10.1088/1742-6596/969/1/012057
In(2018) Journal of Physics: Conference Series Vol. 969. IOP Publishing

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Aikawa, Y, Tsumura, K, Narita, T, Takayanagi, H, Ishiguro, R (2018) Supercurrent through MoS2-based electric double-layer transistor sandwiched between conventional superconductors. Journal of Physics: Conference Series, 969. 12058pp. doi:10.1088/1742-6596/969/1/012058
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