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Fathy, D., Holland, O.W., Narayan, J., Appleton, B.R. (1985) TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 571-575 doi:10.1016/0168-583x(85)90435-5

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Reference TypeJournal (article/letter/editorial)
TitleTEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsFathy, D.Author
Holland, O.W.Author
Narayan, J.Author
Appleton, B.R.Author
Year1985 (March)Volume7
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(85)90435-5Search in ResearchGate
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Mindat Ref. ID5583669Long-form Identifiermindat:1:5:5583669:4
GUID0
Full ReferenceFathy, D., Holland, O.W., Narayan, J., Appleton, B.R. (1985) TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 571-575 doi:10.1016/0168-583x(85)90435-5
Plain TextFathy, D., Holland, O.W., Narayan, J., Appleton, B.R. (1985) TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 571-575 doi:10.1016/0168-583x(85)90435-5
In(1985) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 7. Elsevier BV

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Appleton, B.R., Holland, O.W., Poker, D.B., Narayan, J., Fathy, D. (1985) Morphological instabilities and ion beam mixing in Ge. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 639-644 doi:10.1016/0168-583x(85)90447-1
Holland, O.W., Narayan, J., Fathy, D. (1985) Ion beam processes in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 243-250 doi:10.1016/0168-583x(85)90561-0
Holland, O.W., Fathy, D., Narayan, J., Oen, O.S. (1985) Dose rate effects in silicon during heavy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 10. 565-568 doi:10.1016/0168-583x(85)90309-x
Appleton, B.R., Naramoto, H., White, C.W., Holland, O.W., McHargue, C.J., Farlow, G., Narayan, J., Williams, J.M. (1984) Ion implantation, ion beam mixing, and annealing studies of metals in Al2O3, SiC and Si3N4. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1 (2). 167-175 doi:10.1016/0168-583x(84)90064-8
Holland, O.W., Narayan, J. (1989) Model for boron diffusion in Si at high concentrations. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 40. 537-542 doi:10.1016/0168-583x(89)91040-9
(1985) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90520-8
Bøttiger, J., Nielsen, S.K., Thorsen, P.T. (1985) On low-temperature ion-beam mixing of thin markers in nickel. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 707-710 doi:10.1016/0168-583x(85)90456-2
White, C.W., Farlow, G.C., McHargue, C.J., Sklad, P.S., Angelini, M.P., Appleton, B.R. (1985) Formation of amorphous layers in Al2O3 by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 473-478 doi:10.1016/0168-583x(85)90415-x
(1985) Subject index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (4). 573-575 doi:10.1016/0168-583x(85)90515-4
(1985) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 929-940 doi:10.1016/0168-583x(85)90497-5
Haynes, T.E., Holland, O.W. (1991) Dose rate effects on damage formation in ion-implanted gallium arsenide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1028-1031 doi:10.1016/0168-583x(91)95757-5
 
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