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Cerofolini, G.F., Meda, L., Volpones, C., Dierckx, R., Mercurio, G., Anderle, M., Canteri, R., Cembali, F., Fabbri, R., Servidori, M. (1989) Nonlinear phenomena in hydrogen implantation into (100) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 26-29 doi:10.1016/0168-583x(89)90735-0

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Reference TypeJournal (article/letter/editorial)
TitleNonlinear phenomena in hydrogen implantation into (100) silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsCerofolini, G.F.Author
Meda, L.Author
Volpones, C.Author
Dierckx, R.Author
Mercurio, G.Author
Anderle, M.Author
Canteri, R.Author
Cembali, F.Author
Fabbri, R.Author
Servidori, M.Author
Year1989 (March)Volume39
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(89)90735-0Search in ResearchGate
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Mindat Ref. ID5592337Long-form Identifiermindat:1:5:5592337:0
GUID0
Full ReferenceCerofolini, G.F., Meda, L., Volpones, C., Dierckx, R., Mercurio, G., Anderle, M., Canteri, R., Cembali, F., Fabbri, R., Servidori, M. (1989) Nonlinear phenomena in hydrogen implantation into (100) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 26-29 doi:10.1016/0168-583x(89)90735-0
Plain TextCerofolini, G.F., Meda, L., Volpones, C., Dierckx, R., Mercurio, G., Anderle, M., Canteri, R., Cembali, F., Fabbri, R., Servidori, M. (1989) Nonlinear phenomena in hydrogen implantation into (100) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 26-29 doi:10.1016/0168-583x(89)90735-0
In(1989, March) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 39 (1) Elsevier BV

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Meda, L., Cerofolini, G.F., Dierckx, R., Mercurio, G., Servidori, M., Cembali, F., Anderle, M., Canteri, R., Ottaviani, G., Claeys, C., Vanhellemont, J. (1989) Hydrogen implantation into (100) silicon: A study of the released damage. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 381-385 doi:10.1016/0168-583x(89)90808-2
Solmi, S., Cembali, F., Fabbri, R., Lotti, R., Servidori, M., Anderle, M., Canteri, R. (1989) Dependence of transient enhanced diffusion on defect depth position in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 394-397 doi:10.1016/0168-583x(89)90211-5
Servidori, M., Cembali, F., Fabbri, R., Gabilli, E., Negrini, P., Solmi, S., Zaumseil, P., Winter, U., Anderle, M., Canteri, R. (1989) Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 347-351 doi:10.1016/0168-583x(89)90800-8
Cerofolini, G. F., Meda, L., Volpones, C., Ottaviani, G., DeFayette, J., Dierckx, R., Donelli, D., Orlandini, M., Anderle, M., Canteri, R., Claeys, C., Vanhellemont, J. (1990) Structure and evolution of the displacement field in hydrogen-implanted silicon. Physical Review B, 41 (18) 12607-12618 doi:10.1103/physrevb.41.12607
Fabbri, R., Servidori, M., Cembali, F., Nipoti, R., Bianconi, M. (1992) X-ray determination of lattice damage depth-profiles due to electronic and nuclear energy losses in silicon implanted with MeV boron ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 66 (4). 511-514 doi:10.1016/0168-583x(92)95427-s
Pawar, P.S., Kothari, D.C., Narsale, A.M., Raole, P.M., Gogawale, S.V., Guzman, L., Girardi, S., Dapor, M., Anderle, M., Canteri, R. (1989) Structural investigation of Al2O3 formed by ion implantation at various doses. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 670-674 doi:10.1016/0168-583x(89)90871-9
Meda, L., Cerofolini, G.F., Ottaviani, G., Tonini, R., Corni, F., Balboni, R., Anderle, M., Canteri, R., Dierckx, R. (1991) Evidence for molecular hydrogen in single crystal silicon. Physica B: Condensed Matter, 170 (1). 259-264 doi:10.1016/0921-4526(91)90134-z
Cembali, F., Servidori, M., Mazzone, A.M. (1985) Channeling phenomena in off-axis ion implanted (001) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (2). 225-228 doi:10.1016/0168-583x(85)90055-2
Galloni, R., Tsuo, Y.S., Zignani, F. (1989) Ion implantation and hydrogen passivation in amorphous silicon films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 386-388 doi:10.1016/0168-583x(89)90809-4
Meda, L., Bertoni, S., Cerofolini, G.F., Spaggiari, C. (1993) Thin buried oxide in implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 813-817 doi:10.1016/0168-583x(93)90688-3
Bresolin, C., Zaccherini, C., Anderle, M., Canteri, R. (1990) A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF2+. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 51 (2). 122-124 doi:10.1016/0168-583x(90)90511-r
 
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