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Wesch, W., Jordanov, A., Gärtner, K., Götz, G. (1989) Investigation of defects in weakly damaged ion implanted GaAs layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 445-448 doi:10.1016/0168-583x(89)90822-7

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of defects in weakly damaged ion implanted GaAs layers
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsWesch, W.Author
Jordanov, A.Author
Gärtner, K.Author
Götz, G.Author
Year1989 (March)Volume39
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(89)90822-7Search in ResearchGate
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Mindat Ref. ID5592512Long-form Identifiermindat:1:5:5592512:9
GUID0
Full ReferenceWesch, W., Jordanov, A., Gärtner, K., Götz, G. (1989) Investigation of defects in weakly damaged ion implanted GaAs layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 445-448 doi:10.1016/0168-583x(89)90822-7
Plain TextWesch, W., Jordanov, A., Gärtner, K., Götz, G. (1989) Investigation of defects in weakly damaged ion implanted GaAs layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 445-448 doi:10.1016/0168-583x(89)90822-7
In(1989, March) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 39 (1) Elsevier BV

See Also

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Wesch, W., Gärtner, K., Jordanov, A., Götz, G. (1990) Investigation of defects in GaAs by dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 45 (1). 446-449 doi:10.1016/0168-583x(90)90872-r
Wesch, W., Gärtner, K., Wendler, E., Götz, G. (1986) RBS and optical investigations of defects in weakly damaged GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 431-434 doi:10.1016/0168-583x(86)90338-1
Dygo, A., Kaczanowski, J., Turos, A., Wesch, W., Gärtner, K., Götz, G. (1992) Analysis of defects in weakly damaged GaAs by Monte Carlo channeling simulation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 64 (1). 721-723 doi:10.1016/0168-583x(92)95565-9
Götz, G., Gärtner, K., Wesch, W. (1992) Investigation of defects by RBS-channeling methods. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 59-63 doi:10.1016/0168-583x(92)95169-r
Götz, G., Gärtner, K., Wesch, W. (1990) Investigation of point defects by temperature-dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 50 (1). 131-134 doi:10.1016/0168-583x(90)90344-t
Wendler, E., Wesch, W. (1993) Defect nucleation in weakly damaged ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 73 (4). 489-495 doi:10.1016/0168-583x(93)95830-x
Wesch, W., Wendler, E., Gärtner, K. (1992) Nucleation of point defects in low-fluence ion-implanted GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 52-55 doi:10.1016/0168-583x(92)95167-p
Wesch, W., Wendler, E., Götz, G. (1987) Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 22 (4). 532-535 doi:10.1016/0168-583x(87)90156-x
Gärtner, K., Wesch, W., Götz, G. (1990) Temperature dependence of axial dechanneling by point defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 48 (1). 192-196 doi:10.1016/0168-583x(90)90102-z
Wendler, E., Wesch, W., Götz, G. (1991) Defect production in ion implanted GaAs, GaP and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 789-793 doi:10.1016/0168-583x(91)96281-o
Kaczanowski, J., Turos, A., Gärtner, K., Bachman, T., Wesch, W. (1994) Evaluation of atomic displacement in ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85 (1). 607-610 doi:10.1016/0168-583x(94)95891-2
 
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