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Holland, O.W., White, C.W. (1991) Ion-induced damage and amorphization in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 353-362 doi:10.1016/0168-583x(91)95238-9

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Reference TypeJournal (article/letter/editorial)
TitleIon-induced damage and amorphization in Si
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHolland, O.W.Author
White, C.W.Author
Year1991 (July)Volume59
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)95238-9Search in ResearchGate
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Mindat Ref. ID5597617Long-form Identifiermindat:1:5:5597617:8
GUID0
Full ReferenceHolland, O.W., White, C.W. (1991) Ion-induced damage and amorphization in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 353-362 doi:10.1016/0168-583x(91)95238-9
Plain TextHolland, O.W., White, C.W. (1991) Ion-induced damage and amorphization in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 353-362 doi:10.1016/0168-583x(91)95238-9
In(1991) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 59. Elsevier BV

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Haynes, T.E., Holland, O.W. (1991) Dose rate effects on damage formation in ion-implanted gallium arsenide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1028-1031 doi:10.1016/0168-583x(91)95757-5
Tamura, M., Ando, T., Ohyu, K. (1991) MeV-ion-induced damage in Si and its annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 572-583 doi:10.1016/0168-583x(91)95282-i
Vallet, C.E., White, C.W. (1991) Application of ion implantation to electrochemical studies. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 855-860 doi:10.1016/0168-583x(91)95719-t
Holland, O.W., Narayan, J., Fathy, D. (1985) Ion beam processes in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 243-250 doi:10.1016/0168-583x(85)90561-0
Haynes, T.E., Holland, O.W. (1993) Lattice damage in ion implanted silicon-germanium alloys. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 901-905 doi:10.1016/0168-583x(93)90705-b
Jaouen, C., Rivière, J.P., Delafond, J. (1991) Temperature dependence for ion-induced amorphization of NiAl. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 406-409 doi:10.1016/0168-583x(91)95247-b
Joslin, D.L., McHargue, C.J., White, C.W., Evans, N.D. (1994) Amorphization of sapphire during ion beam mixing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 91 (1). 562-565 doi:10.1016/0168-583x(94)96286-3
Wang, L.M., Eby, R.K., Janeczek, J., Ewing, R.C. (1991) In situ TEM study of ion-beam-induced amorphization of complex silicate structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 395-400 doi:10.1016/0168-583x(91)95245-9
(1991) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. doi:10.1016/0168-583x(91)95158-a
Golanski, A., Grob, A., Grob, J.J., Holland, O.W., Pennycook, S.J., White, C.W. (1992) Dynamics of lattice damage accumulation for MeV ions in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (3). 365-371 doi:10.1016/0168-583x(92)95258-s
Hart, R.R., Vijay, R.P., Rubio, John D. (1991) Ar ion beam induced recrystallization of amorphous layers in thin Si films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 427-430 doi:10.1016/0168-583x(91)95252-9
 
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