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Han, Yi, Peng, Jinxin, Li, Bingsheng, Wang, Zhiguang, Wei, Kongfang, Shen, Tielong, Sun, Jianrong, Zhang, Limin, Yao, Cunfeng, Gao, Ning, Gao, Xing, Pang, Lilong, Zhu, Yabin, Chang, Hailong, Cui, Minghuan, Luo, Peng, Sheng, Yanbin, Zhang, Hongpeng, Zhang, Li, Fang, Xuesong, Zhao, Sixiang, Jin, Jin, Huang, Yuxuan, Liu, Chao, Tai, Pengfei, Wang, Dong, He, Wenhao (2017) Lattice disorder produced in GaN by He-ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 543-547 doi:10.1016/j.nimb.2016.12.039

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Reference TypeJournal (article/letter/editorial)
TitleLattice disorder produced in GaN by He-ion implantation
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHan, YiAuthor
Peng, JinxinAuthor
Li, BingshengAuthor
Wang, ZhiguangAuthor
Wei, KongfangAuthor
Shen, TielongAuthor
Sun, JianrongAuthor
Zhang, LiminAuthor
Yao, CunfengAuthor
Gao, NingAuthor
Gao, XingAuthor
Pang, LilongAuthor
Zhu, YabinAuthor
Chang, HailongAuthor
Cui, MinghuanAuthor
Luo, PengAuthor
Sheng, YanbinAuthor
Zhang, HongpengAuthor
Zhang, LiAuthor
Fang, XuesongAuthor
Zhao, SixiangAuthor
Jin, JinAuthor
Huang, YuxuanAuthor
Liu, ChaoAuthor
Tai, PengfeiAuthor
Wang, DongAuthor
He, WenhaoAuthor
Year2017 (September)Volume406
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2016.12.039Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5654554Long-form Identifiermindat:1:5:5654554:0
GUID0
Full ReferenceHan, Yi, Peng, Jinxin, Li, Bingsheng, Wang, Zhiguang, Wei, Kongfang, Shen, Tielong, Sun, Jianrong, Zhang, Limin, Yao, Cunfeng, Gao, Ning, Gao, Xing, Pang, Lilong, Zhu, Yabin, Chang, Hailong, Cui, Minghuan, Luo, Peng, Sheng, Yanbin, Zhang, Hongpeng, Zhang, Li, Fang, Xuesong, Zhao, Sixiang, Jin, Jin, Huang, Yuxuan, Liu, Chao, Tai, Pengfei, Wang, Dong, He, Wenhao (2017) Lattice disorder produced in GaN by He-ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 543-547 doi:10.1016/j.nimb.2016.12.039
Plain TextHan, Yi, Peng, Jinxin, Li, Bingsheng, Wang, Zhiguang, Wei, Kongfang, Shen, Tielong, Sun, Jianrong, Zhang, Limin, Yao, Cunfeng, Gao, Ning, Gao, Xing, Pang, Lilong, Zhu, Yabin, Chang, Hailong, Cui, Minghuan, Luo, Peng, Sheng, Yanbin, Zhang, Hongpeng, Zhang, Li, Fang, Xuesong, Zhao, Sixiang, Jin, Jin, Huang, Yuxuan, Liu, Chao, Tai, Pengfei, Wang, Dong, He, Wenhao (2017) Lattice disorder produced in GaN by He-ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 543-547 doi:10.1016/j.nimb.2016.12.039
In(2017) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 406. Elsevier BV


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