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Yang, Zhimei, Li, Yun, Ma, Yao, Gong, Min, Huang, Mingmin, Gao, Bo, lai, Li (2017) XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 407. 304-309 doi:10.1016/j.nimb.2017.07.030

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Reference TypeJournal (article/letter/editorial)
TitleXTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsYang, ZhimeiAuthor
Li, YunAuthor
Ma, YaoAuthor
Gong, MinAuthor
Huang, MingminAuthor
Gao, BoAuthor
lai, LiAuthor
Year2017 (September)Volume407
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2017.07.030Search in ResearchGate
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Mindat Ref. ID5654879Long-form Identifiermindat:1:5:5654879:6
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Full ReferenceYang, Zhimei, Li, Yun, Ma, Yao, Gong, Min, Huang, Mingmin, Gao, Bo, lai, Li (2017) XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 407. 304-309 doi:10.1016/j.nimb.2017.07.030
Plain TextYang, Zhimei, Li, Yun, Ma, Yao, Gong, Min, Huang, Mingmin, Gao, Bo, lai, Li (2017) XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 407. 304-309 doi:10.1016/j.nimb.2017.07.030
In(2017) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 407. Elsevier BV

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Yang, Zhimei, Ma, Yao, Gong, Min, Li, Yun, Huang, Mingmin, Gao, Bo, Zhao, Xin (2017) Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 401. 51-55 doi:10.1016/j.nimb.2017.02.004
Yang, Zhimei, Lan, Fan, Li, Yun, Gong, Min, Huang, Mingmin, Gao, Bo, Hu, Junkui, Ma, Yao (2018) The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 436. 244-248 doi:10.1016/j.nimb.2018.09.024
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Huang, Mingmin, Yang, Zhimei, Wang, Shaomin, Liu, Jiyuan, Gong, Min, Ma, Yao, Liu, Jie, Zhai, Pengfei, Sun, Youmei, Li, Yun (2020) Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 478. 5-10 doi:10.1016/j.nimb.2020.05.002
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