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Ershov, M, Ryzhii, V, Saito, K (1995) Capacitance-voltage characteristics of multiple-quantum-well semiconductor heterostructures. Journal of Physics D: Applied Physics, 28. 2118-2122 doi:10.1088/0022-3727/28/10/019

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Reference TypeJournal (article/letter/editorial)
TitleCapacitance-voltage characteristics of multiple-quantum-well semiconductor heterostructures
JournalJournal of Physics D: Applied Physics
AuthorsErshov, MAuthor
Ryzhii, VAuthor
Saito, KAuthor
Year1995 (October 14)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/28/10/019Search in ResearchGate
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Mindat Ref. ID5665614Long-form Identifiermindat:1:5:5665614:7
GUID0
Full ReferenceErshov, M, Ryzhii, V, Saito, K (1995) Capacitance-voltage characteristics of multiple-quantum-well semiconductor heterostructures. Journal of Physics D: Applied Physics, 28. 2118-2122 doi:10.1088/0022-3727/28/10/019
Plain TextErshov, M, Ryzhii, V, Saito, K (1995) Capacitance-voltage characteristics of multiple-quantum-well semiconductor heterostructures. Journal of Physics D: Applied Physics, 28. 2118-2122 doi:10.1088/0022-3727/28/10/019
In(1995) Journal of Physics D: Applied Physics Vol. 28. IOP Publishing

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