Rottmann, M, Heckner, K -H (1995) Electrical and structural properties of indium tin oxide films deposited by reactive DC sputtering. Journal of Physics D: Applied Physics, 28. 1448-1453 doi:10.1088/0022-3727/28/7/024
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Electrical and structural properties of indium tin oxide films deposited by reactive DC sputtering | ||
Journal | Journal of Physics D: Applied Physics | ||
Authors | Rottmann, M | Author | |
Heckner, K -H | Author | ||
Year | 1995 (July 14) | Volume | 28 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/0022-3727/28/7/024Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5665909 | Long-form Identifier | mindat:1:5:5665909:2 |
GUID | 0 | ||
Full Reference | Rottmann, M, Heckner, K -H (1995) Electrical and structural properties of indium tin oxide films deposited by reactive DC sputtering. Journal of Physics D: Applied Physics, 28. 1448-1453 doi:10.1088/0022-3727/28/7/024 | ||
Plain Text | Rottmann, M, Heckner, K -H (1995) Electrical and structural properties of indium tin oxide films deposited by reactive DC sputtering. Journal of Physics D: Applied Physics, 28. 1448-1453 doi:10.1088/0022-3727/28/7/024 | ||
In | (1995) Journal of Physics D: Applied Physics Vol. 28. IOP Publishing |
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