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Bonilla, Ruy S, Wilshaw, Peter R (2018) Potassium ions in SiO2: electrets for silicon surface passivation. Journal of Physics D: Applied Physics, 51. 25101pp. doi:10.1088/1361-6463/aa9b1b

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Reference TypeJournal (article/letter/editorial)
TitlePotassium ions in SiO2: electrets for silicon surface passivation
JournalJournal of Physics D: Applied Physics
AuthorsBonilla, Ruy SAuthor
Wilshaw, Peter RAuthor
Year2018 (January 17)Volume51
PublisherIOP Publishing
DOIdoi:10.1088/1361-6463/aa9b1bSearch in ResearchGate
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Mindat Ref. ID5691805Long-form Identifiermindat:1:5:5691805:6
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Full ReferenceBonilla, Ruy S, Wilshaw, Peter R (2018) Potassium ions in SiO2: electrets for silicon surface passivation. Journal of Physics D: Applied Physics, 51. 25101pp. doi:10.1088/1361-6463/aa9b1b
Plain TextBonilla, Ruy S, Wilshaw, Peter R (2018) Potassium ions in SiO2: electrets for silicon surface passivation. Journal of Physics D: Applied Physics, 51. 25101pp. doi:10.1088/1361-6463/aa9b1b
In(2015) Journal of Physics D: Applied Physics Vol. 51. IOP Publishing

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Bonilla, Ruy S., Wilshaw, Peter R. (2014) A technique for field effect surface passivation for silicon solar cells. Applied Physics Letters, 104 (23). 232903pp. doi:10.1063/1.4882161
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2014) On the location and stability of charge in SiO2/SiNxdielectric double layers used for silicon surface passivation. Journal of Applied Physics, 115 (14). 144105pp. doi:10.1063/1.4871075
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Wilshaw, Peter R. (2015) Erratum: “On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation” [J. Appl. Phys. 115, 144105 (2014)]. Journal of Applied Physics, 117 (12). 129901pp. doi:10.1063/1.4915629
Bonilla, Ruy S., Woodcock, Frederick, Wilshaw, Peter R. (2014) Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. Journal of Applied Physics, 116 (5). 54102pp. doi:10.1063/1.4892099
Bonilla, Ruy S., Hoex, Bram, Hamer, Phillip, Wilshaw, Peter R. (2017) Dielectric surface passivation for silicon solar cells: A review. physica status solidi (a), 214 (7). 1700293pp. doi:10.1002/pssa.201700293
Bonilla, Ruy S., Wilshaw, Peter R. (2017) On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements. Journal of Applied Physics, 121 (13). 135301pp. doi:10.1063/1.4979722
Bonilla, Ruy S., Reichel, Christian, Hermle, Martin, Hamer, Phillip, Wilshaw, Peter R. (2017) Long term stability of c-Si surface passivation using corona charged SiO 2. Applied Surface Science, 412. 657-667 doi:10.1016/j.apsusc.2017.03.204
Zhao, Lei, Wang, Guanghong, Diao, Hongwei, Wang, Wenjing (2018) Physical criteria for the interface passivation layer in hydrogenated amorphous/crystalline silicon heterojunction solar cell. Journal of Physics D: Applied Physics, 51. 45501pp. doi:10.1088/1361-6463/aa9ecd
Bourret‐Sicotte, Gabrielle, Hamer, Phillip, Bonilla, Ruy. S., Collett, Katherine, Ciesla, Alison, Colwell, Jack, Wilshaw, Peter R (2017) Shielded hydrogen passivation − A potential in‐line passivation process. physica status solidi (a), 214 (7). 1700383pp. doi:10.1002/pssa.201700383
Kruse, Peter (2018) Review on water quality sensors. Journal of Physics D: Applied Physics, 51. 203002pp. doi:10.1088/1361-6463/aabb93
Gadea, Gerard, Pacios, Mercè, Morata, Álex, Tarancón, Albert (2018) Silicon-based nanostructures for integrated thermoelectric generators. Journal of Physics D: Applied Physics, 51. 423001pp. doi:10.1088/1361-6463/aad683
 
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