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Tani, Eiji, Baumard, Jean François (1980) Electrical properties and defect structure of rutile slightly doped with Cr and Ta. Journal of Solid State Chemistry, 32. 105-113 doi:10.1016/0022-4596(80)90273-x

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties and defect structure of rutile slightly doped with Cr and Ta
JournalJournal of Solid State Chemistry
AuthorsTani, EijiAuthor
Baumard, Jean FrançoisAuthor
Year1980 (March)Volume32
PublisherElsevier BV
DOIdoi:10.1016/0022-4596(80)90273-xSearch in ResearchGate
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Mindat Ref. ID577199Long-form Identifiermindat:1:5:577199:2
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Full ReferenceTani, Eiji, Baumard, Jean François (1980) Electrical properties and defect structure of rutile slightly doped with Cr and Ta. Journal of Solid State Chemistry, 32. 105-113 doi:10.1016/0022-4596(80)90273-x
Plain TextTani, Eiji, Baumard, Jean François (1980) Electrical properties and defect structure of rutile slightly doped with Cr and Ta. Journal of Solid State Chemistry, 32. 105-113 doi:10.1016/0022-4596(80)90273-x
In(1980, March) Journal of Solid State Chemistry Vol. 32 (1) Elsevier BV

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(1980) Electrical conductivity as a method to study kinetics of solid-state reactions. Journal of Solid State Chemistry, 32. 258 doi:10.1016/0022-4596(80)90613-1
(1980) Preparation and Mo¨ssbauer effect ofCr1−xFexOOH(0 ⩽ x ⩽ 1.0) with the InOOH-type structure. Journal of Solid State Chemistry, 32. 253 doi:10.1016/0022-4596(80)90587-3
(1980) The crystal structure ofAgTlX phases (X =S, Se, Te) Journal of Solid State Chemistry, 32. 256 doi:10.1016/0022-4596(80)90602-7
(1980) Structure cristalline de la phase β-KEr2F7 composés isotypes. Journal of Solid State Chemistry, 32. 129 doi:10.1016/0022-4596(80)90287-x
 
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