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Bensadiq, A., Zaari, H., Benyoussef, A., El Kenz, A. (2016) Electronic and magnetic properties of TbNi4Si: Ab initio calculations, mean field approximation and Monte Carlo simulation. Journal of Solid State Chemistry, 241. 38-46 doi:10.1016/j.jssc.2016.04.036

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Reference TypeJournal (article/letter/editorial)
TitleElectronic and magnetic properties of TbNi4Si: Ab initio calculations, mean field approximation and Monte Carlo simulation
JournalJournal of Solid State Chemistry
AuthorsBensadiq, A.Author
Zaari, H.Author
Benyoussef, A.Author
El Kenz, A.Author
Year2016 (September)Volume241
PublisherElsevier BV
DOIdoi:10.1016/j.jssc.2016.04.036Search in ResearchGate
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Mindat Ref. ID593170Long-form Identifiermindat:1:5:593170:9
GUID0
Full ReferenceBensadiq, A., Zaari, H., Benyoussef, A., El Kenz, A. (2016) Electronic and magnetic properties of TbNi4Si: Ab initio calculations, mean field approximation and Monte Carlo simulation. Journal of Solid State Chemistry, 241. 38-46 doi:10.1016/j.jssc.2016.04.036
Plain TextBensadiq, A., Zaari, H., Benyoussef, A., El Kenz, A. (2016) Electronic and magnetic properties of TbNi4Si: Ab initio calculations, mean field approximation and Monte Carlo simulation. Journal of Solid State Chemistry, 241. 38-46 doi:10.1016/j.jssc.2016.04.036
In(2016) Journal of Solid State Chemistry Vol. 241. Elsevier BV

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