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Xia, Guo, Guang-Di, Shen (2008) The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure. Chinese Physics B, 17. 307-310 doi:10.1088/1674-1056/17/1/054

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Reference TypeJournal (article/letter/editorial)
TitleThe scalability of the tunnel-regenerated multi-active-region light-emitting diode structure
JournalChinese Physics B
AuthorsXia, GuoAuthor
Guang-Di, ShenAuthor
Year2008 (January)Volume17
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/17/1/054Search in ResearchGate
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Mindat Ref. ID5997988Long-form Identifiermindat:1:5:5997988:1
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Full ReferenceXia, Guo, Guang-Di, Shen (2008) The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure. Chinese Physics B, 17. 307-310 doi:10.1088/1674-1056/17/1/054
Plain TextXia, Guo, Guang-Di, Shen (2008) The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure. Chinese Physics B, 17. 307-310 doi:10.1088/1674-1056/17/1/054
In(n.d.) Chinese Physics B Vol. 17. IOP Publishing

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Hong-Xia, Lu, Zheng-Chao, Dong, Hao, Fu (2008) Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction. Chinese Physics B, 17. 680-684 doi:10.1088/1674-1056/17/2/053
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(2008) ANNOUNCEMENT. Chinese Physics B, 17. doi:10.1088/1674-1056/17/1/e01
 
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