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Ai-Bin, Hu, Qiu-Xia, Xu (2010) Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate. Chinese Physics B, 19. 57302pp. doi:10.1088/1674-1056/19/5/057302

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Reference TypeJournal (article/letter/editorial)
TitleComparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate
JournalChinese Physics B
AuthorsAi-Bin, HuAuthor
Qiu-Xia, XuAuthor
Year2010 (May)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/5/057302Search in ResearchGate
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Mindat Ref. ID6000327Long-form Identifiermindat:1:5:6000327:2
GUID0
Full ReferenceAi-Bin, Hu, Qiu-Xia, Xu (2010) Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate. Chinese Physics B, 19. 57302pp. doi:10.1088/1674-1056/19/5/057302
Plain TextAi-Bin, Hu, Qiu-Xia, Xu (2010) Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate. Chinese Physics B, 19. 57302pp. doi:10.1088/1674-1056/19/5/057302
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Gao-Bo, Xu, Qiu-Xia, Xu (2009) Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition. Chinese Physics B, 18. 768-772 doi:10.1088/1674-1056/18/2/059
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