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Ma, Zhi-Hua, Cao, Quan, Zuo, Yu-Hua, Zheng, Jun, Xue, Chun-Lai, Cheng, Bu-Wen, Wang, Qi-Ming (2011) Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material. Chinese Physics B, 20. 106104pp. doi:10.1088/1674-1056/20/10/106104

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Reference TypeJournal (article/letter/editorial)
TitleInfrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
JournalChinese Physics B
AuthorsMa, Zhi-HuaAuthor
Cao, QuanAuthor
Zuo, Yu-HuaAuthor
Zheng, JunAuthor
Xue, Chun-LaiAuthor
Cheng, Bu-WenAuthor
Wang, Qi-MingAuthor
Year2011 (October)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/10/106104Search in ResearchGate
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Mindat Ref. ID6000904Long-form Identifiermindat:1:5:6000904:5
GUID0
Full ReferenceMa, Zhi-Hua, Cao, Quan, Zuo, Yu-Hua, Zheng, Jun, Xue, Chun-Lai, Cheng, Bu-Wen, Wang, Qi-Ming (2011) Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material. Chinese Physics B, 20. 106104pp. doi:10.1088/1674-1056/20/10/106104
Plain TextMa, Zhi-Hua, Cao, Quan, Zuo, Yu-Hua, Zheng, Jun, Xue, Chun-Lai, Cheng, Bu-Wen, Wang, Qi-Ming (2011) Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material. Chinese Physics B, 20. 106104pp. doi:10.1088/1674-1056/20/10/106104
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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