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Gao, Hai-Xia, Hu, Rong, Yang, Yin-Tang (2011) Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states. Chinese Physics B, 20. 116803pp. doi:10.1088/1674-1056/20/11/116803

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Reference TypeJournal (article/letter/editorial)
TitleModeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states
JournalChinese Physics B
AuthorsGao, Hai-XiaAuthor
Hu, RongAuthor
Yang, Yin-TangAuthor
Year2011 (November)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/11/116803Search in ResearchGate
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Mindat Ref. ID6001000Long-form Identifiermindat:1:5:6001000:5
GUID0
Full ReferenceGao, Hai-Xia, Hu, Rong, Yang, Yin-Tang (2011) Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states. Chinese Physics B, 20. 116803pp. doi:10.1088/1674-1056/20/11/116803
Plain TextGao, Hai-Xia, Hu, Rong, Yang, Yin-Tang (2011) Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states. Chinese Physics B, 20. 116803pp. doi:10.1088/1674-1056/20/11/116803
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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