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Peng, Dong-Sheng, Chen, Zhi-Gang, Tan, Cong-Cong (2012) The influence of an Si x N y interlayer on a GaN film grown on an Si(111) substrate. Chinese Physics B, 21. 128101pp. doi:10.1088/1674-1056/21/12/128101

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of an Si x N y interlayer on a GaN film grown on an Si(111) substrate
JournalChinese Physics B
AuthorsPeng, Dong-ShengAuthor
Chen, Zhi-GangAuthor
Tan, Cong-CongAuthor
Year2012 (December)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/12/128101Search in ResearchGate
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Mindat Ref. ID6002135Long-form Identifiermindat:1:5:6002135:7
GUID0
Full ReferencePeng, Dong-Sheng, Chen, Zhi-Gang, Tan, Cong-Cong (2012) The influence of an Si x N y interlayer on a GaN film grown on an Si(111) substrate. Chinese Physics B, 21. 128101pp. doi:10.1088/1674-1056/21/12/128101
Plain TextPeng, Dong-Sheng, Chen, Zhi-Gang, Tan, Cong-Cong (2012) The influence of an Si x N y interlayer on a GaN film grown on an Si(111) substrate. Chinese Physics B, 21. 128101pp. doi:10.1088/1674-1056/21/12/128101
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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