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Zhang, Li-Ying, Yan, Jin-Liang, Zhang, Yi-Jun, Li, Ting (2012) Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga 2 O 3. Chinese Physics B, 21. 67102pp. doi:10.1088/1674-1056/21/6/067102

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Reference TypeJournal (article/letter/editorial)
TitleEffects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga 2 O 3
JournalChinese Physics B
AuthorsZhang, Li-YingAuthor
Yan, Jin-LiangAuthor
Zhang, Yi-JunAuthor
Li, TingAuthor
Year2012 (June)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/6/067102Search in ResearchGate
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Mindat Ref. ID6002604Long-form Identifiermindat:1:5:6002604:2
GUID0
Full ReferenceZhang, Li-Ying, Yan, Jin-Liang, Zhang, Yi-Jun, Li, Ting (2012) Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga 2 O 3. Chinese Physics B, 21. 67102pp. doi:10.1088/1674-1056/21/6/067102
Plain TextZhang, Li-Ying, Yan, Jin-Liang, Zhang, Yi-Jun, Li, Ting (2012) Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga 2 O 3. Chinese Physics B, 21. 67102pp. doi:10.1088/1674-1056/21/6/067102
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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