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Wang, Bo, Su, Shi-Chen, He, Miao, Chen, Hong, Wu, Wen-Bo, Zhang, Wei-Wei, Wang, Qiao, Chen, Yu-Long, Gao, You, Zhang, Li, Zhu, Ke-Bao, Lei, Yan (2013) Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching. Chinese Physics B, 22. 106802pp. doi:10.1088/1674-1056/22/10/106802

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
JournalChinese Physics B
AuthorsWang, BoAuthor
Su, Shi-ChenAuthor
He, MiaoAuthor
Chen, HongAuthor
Wu, Wen-BoAuthor
Zhang, Wei-WeiAuthor
Wang, QiaoAuthor
Chen, Yu-LongAuthor
Gao, YouAuthor
Zhang, LiAuthor
Zhu, Ke-BaoAuthor
Lei, YanAuthor
Year2013 (October)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/10/106802Search in ResearchGate
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Mindat Ref. ID6003105Long-form Identifiermindat:1:5:6003105:3
GUID0
Full ReferenceWang, Bo, Su, Shi-Chen, He, Miao, Chen, Hong, Wu, Wen-Bo, Zhang, Wei-Wei, Wang, Qiao, Chen, Yu-Long, Gao, You, Zhang, Li, Zhu, Ke-Bao, Lei, Yan (2013) Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching. Chinese Physics B, 22. 106802pp. doi:10.1088/1674-1056/22/10/106802
Plain TextWang, Bo, Su, Shi-Chen, He, Miao, Chen, Hong, Wu, Wen-Bo, Zhang, Wei-Wei, Wang, Qiao, Chen, Yu-Long, Gao, You, Zhang, Li, Zhu, Ke-Bao, Lei, Yan (2013) Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching. Chinese Physics B, 22. 106802pp. doi:10.1088/1674-1056/22/10/106802
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing


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