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Zhang, Li-Chun, Zhao, Feng-Zhou, Wang, Fei-Fei, Li, Qing-Shan (2013) Improvement in electroluminescence performance of n-ZnO/Ga 2 O 3 /p-GaN heterojunction light-emitting diodes. Chinese Physics B, 22. 128502pp. doi:10.1088/1674-1056/22/12/128502

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Reference TypeJournal (article/letter/editorial)
TitleImprovement in electroluminescence performance of n-ZnO/Ga 2 O 3 /p-GaN heterojunction light-emitting diodes
JournalChinese Physics B
AuthorsZhang, Li-ChunAuthor
Zhao, Feng-ZhouAuthor
Wang, Fei-FeiAuthor
Li, Qing-ShanAuthor
Year2013 (December)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/12/128502Search in ResearchGate
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Mindat Ref. ID6003337Long-form Identifiermindat:1:5:6003337:0
GUID0
Full ReferenceZhang, Li-Chun, Zhao, Feng-Zhou, Wang, Fei-Fei, Li, Qing-Shan (2013) Improvement in electroluminescence performance of n-ZnO/Ga 2 O 3 /p-GaN heterojunction light-emitting diodes. Chinese Physics B, 22. 128502pp. doi:10.1088/1674-1056/22/12/128502
Plain TextZhang, Li-Chun, Zhao, Feng-Zhou, Wang, Fei-Fei, Li, Qing-Shan (2013) Improvement in electroluminescence performance of n-ZnO/Ga 2 O 3 /p-GaN heterojunction light-emitting diodes. Chinese Physics B, 22. 128502pp. doi:10.1088/1674-1056/22/12/128502
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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