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Xie, Gang, Tang, Cen, Wang, Tao, Guo, Qing, Zhang, Bo, Sheng, Kuang, Ng, Wai Tung (2013) An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient. Chinese Physics B, 22. 26103pp. doi:10.1088/1674-1056/22/2/026103

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Reference TypeJournal (article/letter/editorial)
TitleAn AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient
JournalChinese Physics B
AuthorsXie, GangAuthor
Tang, CenAuthor
Wang, TaoAuthor
Guo, QingAuthor
Zhang, BoAuthor
Sheng, KuangAuthor
Ng, Wai TungAuthor
Year2013 (February)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/2/026103Search in ResearchGate
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Mindat Ref. ID6003405Long-form Identifiermindat:1:5:6003405:0
GUID0
Full ReferenceXie, Gang, Tang, Cen, Wang, Tao, Guo, Qing, Zhang, Bo, Sheng, Kuang, Ng, Wai Tung (2013) An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient. Chinese Physics B, 22. 26103pp. doi:10.1088/1674-1056/22/2/026103
Plain TextXie, Gang, Tang, Cen, Wang, Tao, Guo, Qing, Zhang, Bo, Sheng, Kuang, Ng, Wai Tung (2013) An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient. Chinese Physics B, 22. 26103pp. doi:10.1088/1674-1056/22/2/026103
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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