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Huang, Shi-Hua, Cheng, Pei-Hong, Chen, Yong-Yue (2013) Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering. Chinese Physics B, 22. 27701pp. doi:10.1088/1674-1056/22/2/027701

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Reference TypeJournal (article/letter/editorial)
TitleEffects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering
JournalChinese Physics B
AuthorsHuang, Shi-HuaAuthor
Cheng, Pei-HongAuthor
Chen, Yong-YueAuthor
Year2013 (February)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/2/027701Search in ResearchGate
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Mindat Ref. ID6003431Long-form Identifiermindat:1:5:6003431:5
GUID0
Full ReferenceHuang, Shi-Hua, Cheng, Pei-Hong, Chen, Yong-Yue (2013) Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering. Chinese Physics B, 22. 27701pp. doi:10.1088/1674-1056/22/2/027701
Plain TextHuang, Shi-Hua, Cheng, Pei-Hong, Chen, Yong-Yue (2013) Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering. Chinese Physics B, 22. 27701pp. doi:10.1088/1674-1056/22/2/027701
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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