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Tian, Yu-Feng, Hu, Shu-Jun, Yan, Shi-Shen, Mei, Liang-Mo (2013) Oxide magnetic semiconductors: Materials, properties, and devices. Chinese Physics B, 22. 88505pp. doi:10.1088/1674-1056/22/8/088505

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Reference TypeJournal (article/letter/editorial)
TitleOxide magnetic semiconductors: Materials, properties, and devices
JournalChinese Physics B
AuthorsTian, Yu-FengAuthor
Hu, Shu-JunAuthor
Yan, Shi-ShenAuthor
Mei, Liang-MoAuthor
Year2013 (August)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/8/088505Search in ResearchGate
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Mindat Ref. ID6004073Long-form Identifiermindat:1:5:6004073:2
GUID0
Full ReferenceTian, Yu-Feng, Hu, Shu-Jun, Yan, Shi-Shen, Mei, Liang-Mo (2013) Oxide magnetic semiconductors: Materials, properties, and devices. Chinese Physics B, 22. 88505pp. doi:10.1088/1674-1056/22/8/088505
Plain TextTian, Yu-Feng, Hu, Shu-Jun, Yan, Shi-Shen, Mei, Liang-Mo (2013) Oxide magnetic semiconductors: Materials, properties, and devices. Chinese Physics B, 22. 88505pp. doi:10.1088/1674-1056/22/8/088505
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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