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Chen, Yong-Yue, Wang, Xiong, Cai, Xi-Kun, Yuan, Zi-Jian, Zhu, Xia-Ming, Qiu, Dong-Jiang, Wu, Hui-Zhen (2014) Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor. Chinese Physics B, 23. 26101pp. doi:10.1088/1674-1056/23/2/026101

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Reference TypeJournal (article/letter/editorial)
TitleEffects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor
JournalChinese Physics B
AuthorsChen, Yong-YueAuthor
Wang, XiongAuthor
Cai, Xi-KunAuthor
Yuan, Zi-JianAuthor
Zhu, Xia-MingAuthor
Qiu, Dong-JiangAuthor
Wu, Hui-ZhenAuthor
Year2014 (February)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/2/026101Search in ResearchGate
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Mindat Ref. ID6004640Long-form Identifiermindat:1:5:6004640:8
GUID0
Full ReferenceChen, Yong-Yue, Wang, Xiong, Cai, Xi-Kun, Yuan, Zi-Jian, Zhu, Xia-Ming, Qiu, Dong-Jiang, Wu, Hui-Zhen (2014) Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor. Chinese Physics B, 23. 26101pp. doi:10.1088/1674-1056/23/2/026101
Plain TextChen, Yong-Yue, Wang, Xiong, Cai, Xi-Kun, Yuan, Zi-Jian, Zhu, Xia-Ming, Qiu, Dong-Jiang, Wu, Hui-Zhen (2014) Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor. Chinese Physics B, 23. 26101pp. doi:10.1088/1674-1056/23/2/026101
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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