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Yu, Xiao-Peng, Fan, Guang-Han, Ding, Bin-Bin, Xiong, Jian-Yong, Xiao, Yao, Zhang, Tao, Zheng, Shu-Wen (2014) Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer. Chinese Physics B, 23. 28502pp. doi:10.1088/1674-1056/23/2/028502

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Reference TypeJournal (article/letter/editorial)
TitlePerformance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer
JournalChinese Physics B
AuthorsYu, Xiao-PengAuthor
Fan, Guang-HanAuthor
Ding, Bin-BinAuthor
Xiong, Jian-YongAuthor
Xiao, YaoAuthor
Zhang, TaoAuthor
Zheng, Shu-WenAuthor
Year2014 (February)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/2/028502Search in ResearchGate
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Mindat Ref. ID6004679Long-form Identifiermindat:1:5:6004679:0
GUID0
Full ReferenceYu, Xiao-Peng, Fan, Guang-Han, Ding, Bin-Bin, Xiong, Jian-Yong, Xiao, Yao, Zhang, Tao, Zheng, Shu-Wen (2014) Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer. Chinese Physics B, 23. 28502pp. doi:10.1088/1674-1056/23/2/028502
Plain TextYu, Xiao-Peng, Fan, Guang-Han, Ding, Bin-Bin, Xiong, Jian-Yong, Xiao, Yao, Zhang, Tao, Zheng, Shu-Wen (2014) Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer. Chinese Physics B, 23. 28502pp. doi:10.1088/1674-1056/23/2/028502
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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