Lin, Meng, An, Xia, Li, Ming, Yun, Quan-Xin, Li, Min, Li, Zhi-Qiang, Liu, Peng-Qiang, Zhang, Xing, Huang, Ru (2014) Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application. Chinese Physics B, 23. 67701pp. doi:10.1088/1674-1056/23/6/067701
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application | ||
| Journal | Chinese Physics B | ||
| Authors | Lin, Meng | Author | |
| An, Xia | Author | ||
| Li, Ming | Author | ||
| Yun, Quan-Xin | Author | ||
| Li, Min | Author | ||
| Li, Zhi-Qiang | Author | ||
| Liu, Peng-Qiang | Author | ||
| Zhang, Xing | Author | ||
| Huang, Ru | Author | ||
| Year | 2014 (June) | Volume | 23 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/23/6/067701Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6005110 | Long-form Identifier | mindat:1:5:6005110:9 |
| GUID | 0 | ||
| Full Reference | Lin, Meng, An, Xia, Li, Ming, Yun, Quan-Xin, Li, Min, Li, Zhi-Qiang, Liu, Peng-Qiang, Zhang, Xing, Huang, Ru (2014) Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application. Chinese Physics B, 23. 67701pp. doi:10.1088/1674-1056/23/6/067701 | ||
| Plain Text | Lin, Meng, An, Xia, Li, Ming, Yun, Quan-Xin, Li, Min, Li, Zhi-Qiang, Liu, Peng-Qiang, Zhang, Xing, Huang, Ru (2014) Fabricating GeO 2 passivation layer by N 2 O plasma oxidation for Ge NMOSFETs application. Chinese Physics B, 23. 67701pp. doi:10.1088/1674-1056/23/6/067701 | ||
| In | (n.d.) Chinese Physics B Vol. 23. IOP Publishing | ||
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