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Tian, Xiao-Bo, Xu, Hui (2014) Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier. Chinese Physics B, 23. 68401pp. doi:10.1088/1674-1056/23/6/068401

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier
JournalChinese Physics B
AuthorsTian, Xiao-BoAuthor
Xu, HuiAuthor
Year2014 (June)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/6/068401Search in ResearchGate
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Mindat Ref. ID6005118Long-form Identifiermindat:1:5:6005118:1
GUID0
Full ReferenceTian, Xiao-Bo, Xu, Hui (2014) Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier. Chinese Physics B, 23. 68401pp. doi:10.1088/1674-1056/23/6/068401
Plain TextTian, Xiao-Bo, Xu, Hui (2014) Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier. Chinese Physics B, 23. 68401pp. doi:10.1088/1674-1056/23/6/068401
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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