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Wang, Dang-Chao, Zhang, Yu-Ming (2014) Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates. Chinese Physics B, 23. 76103pp. doi:10.1088/1674-1056/23/7/076103

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates
JournalChinese Physics B
AuthorsWang, Dang-ChaoAuthor
Zhang, Yu-MingAuthor
Year2014 (July)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/7/076103Search in ResearchGate
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Mindat Ref. ID6005196Long-form Identifiermindat:1:5:6005196:9
GUID0
Full ReferenceWang, Dang-Chao, Zhang, Yu-Ming (2014) Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates. Chinese Physics B, 23. 76103pp. doi:10.1088/1674-1056/23/7/076103
Plain TextWang, Dang-Chao, Zhang, Yu-Ming (2014) Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates. Chinese Physics B, 23. 76103pp. doi:10.1088/1674-1056/23/7/076103
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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