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Hu, Ting-Jing, Cui, Xiao-Yan, Li, Xue-Fei, Wang, Jing-Shu, Lv, Xiu-Mei, Wang, Ling-Sheng, Yang, Jing-Hai, Gao, Chun-Xiao (2015) Carrier behavior of HgTe under high pressure revealed by Hall effect measurement. Chinese Physics B, 24. 116401pp. doi:10.1088/1674-1056/24/11/116401

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Reference TypeJournal (article/letter/editorial)
TitleCarrier behavior of HgTe under high pressure revealed by Hall effect measurement
JournalChinese Physics B
AuthorsHu, Ting-JingAuthor
Cui, Xiao-YanAuthor
Li, Xue-FeiAuthor
Wang, Jing-ShuAuthor
Lv, Xiu-MeiAuthor
Wang, Ling-ShengAuthor
Yang, Jing-HaiAuthor
Gao, Chun-XiaoAuthor
Year2015 (November)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/11/116401Search in ResearchGate
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Mindat Ref. ID6005710Long-form Identifiermindat:1:5:6005710:3
GUID0
Full ReferenceHu, Ting-Jing, Cui, Xiao-Yan, Li, Xue-Fei, Wang, Jing-Shu, Lv, Xiu-Mei, Wang, Ling-Sheng, Yang, Jing-Hai, Gao, Chun-Xiao (2015) Carrier behavior of HgTe under high pressure revealed by Hall effect measurement. Chinese Physics B, 24. 116401pp. doi:10.1088/1674-1056/24/11/116401
Plain TextHu, Ting-Jing, Cui, Xiao-Yan, Li, Xue-Fei, Wang, Jing-Shu, Lv, Xiu-Mei, Wang, Ling-Sheng, Yang, Jing-Hai, Gao, Chun-Xiao (2015) Carrier behavior of HgTe under high pressure revealed by Hall effect measurement. Chinese Physics B, 24. 116401pp. doi:10.1088/1674-1056/24/11/116401
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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