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Liu, Wei, Zhao, De-Gang, Jiang, De-Sheng, Chen, Ping, Liu, Zong-Shun, Zhu, Jian-Jun, Li, Xiang, Liang, Feng, Liu, Jian-Ping, Yang, Hui (2015) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode. Chinese Physics B, 24. 127801pp. doi:10.1088/1674-1056/24/12/127801

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Reference TypeJournal (article/letter/editorial)
TitleVariation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
JournalChinese Physics B
AuthorsLiu, WeiAuthor
Zhao, De-GangAuthor
Jiang, De-ShengAuthor
Chen, PingAuthor
Liu, Zong-ShunAuthor
Zhu, Jian-JunAuthor
Li, XiangAuthor
Liang, FengAuthor
Liu, Jian-PingAuthor
Yang, HuiAuthor
Year2015 (December)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/12/127801Search in ResearchGate
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Mindat Ref. ID6005835Long-form Identifiermindat:1:5:6005835:1
GUID0
Full ReferenceLiu, Wei, Zhao, De-Gang, Jiang, De-Sheng, Chen, Ping, Liu, Zong-Shun, Zhu, Jian-Jun, Li, Xiang, Liang, Feng, Liu, Jian-Ping, Yang, Hui (2015) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode. Chinese Physics B, 24. 127801pp. doi:10.1088/1674-1056/24/12/127801
Plain TextLiu, Wei, Zhao, De-Gang, Jiang, De-Sheng, Chen, Ping, Liu, Zong-Shun, Zhu, Jian-Jun, Li, Xiang, Liang, Feng, Liu, Jian-Ping, Yang, Hui (2015) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode. Chinese Physics B, 24. 127801pp. doi:10.1088/1674-1056/24/12/127801
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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