Reference Type | Journal (article/letter/editorial) |
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Title | The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO
2
nanowires |
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Journal | Chinese Physics B |
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Authors | Li, Xian-Hui | Author |
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Yan, Qing-Zhi | Author |
Mi, Ying-Ying | Author |
Han, Yong-Jun | Author |
Wen, Xin | Author |
Ge, Chang-Chun | Author |
Year | 2015 (February) | Volume | 24 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/1674-1056/24/2/026103Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6005909 | Long-form Identifier | mindat:1:5:6005909:5 |
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|
GUID | 0 |
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Full Reference | Li, Xian-Hui, Yan, Qing-Zhi, Mi, Ying-Ying, Han, Yong-Jun, Wen, Xin, Ge, Chang-Chun (2015) The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO
2
nanowires. Chinese Physics B, 24. 26103pp. doi:10.1088/1674-1056/24/2/026103 |
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Plain Text | Li, Xian-Hui, Yan, Qing-Zhi, Mi, Ying-Ying, Han, Yong-Jun, Wen, Xin, Ge, Chang-Chun (2015) The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO
2
nanowires. Chinese Physics B, 24. 26103pp. doi:10.1088/1674-1056/24/2/026103 |
---|
In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing |
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