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Li, Xian-Hui, Yan, Qing-Zhi, Mi, Ying-Ying, Han, Yong-Jun, Wen, Xin, Ge, Chang-Chun (2015) The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO 2 nanowires. Chinese Physics B, 24. 26103pp. doi:10.1088/1674-1056/24/2/026103

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO 2 nanowires
JournalChinese Physics B
AuthorsLi, Xian-HuiAuthor
Yan, Qing-ZhiAuthor
Mi, Ying-YingAuthor
Han, Yong-JunAuthor
Wen, XinAuthor
Ge, Chang-ChunAuthor
Year2015 (February)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/2/026103Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6005909Long-form Identifiermindat:1:5:6005909:5
GUID0
Full ReferenceLi, Xian-Hui, Yan, Qing-Zhi, Mi, Ying-Ying, Han, Yong-Jun, Wen, Xin, Ge, Chang-Chun (2015) The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO 2 nanowires. Chinese Physics B, 24. 26103pp. doi:10.1088/1674-1056/24/2/026103
Plain TextLi, Xian-Hui, Yan, Qing-Zhi, Mi, Ying-Ying, Han, Yong-Jun, Wen, Xin, Ge, Chang-Chun (2015) The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO 2 nanowires. Chinese Physics B, 24. 26103pp. doi:10.1088/1674-1056/24/2/026103
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing


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