| Reference Type | Journal (article/letter/editorial) |
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| Title | One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation |
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| Journal | Chinese Physics B |
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| Authors | Zhang, Jun | Author |
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| Guo, Yu-Feng | Author |
| Xu, Yue | Author |
| Lin, Hong | Author |
| Yang, Hui | Author |
| Hong, Yang | Author |
| Yao, Jia-Fei | Author |
| Year | 2015 (February) | Volume | 24 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/24/2/028502Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6005937 | Long-form Identifier | mindat:1:5:6005937:8 |
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| GUID | 0 |
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| Full Reference | Zhang, Jun, Guo, Yu-Feng, Xu, Yue, Lin, Hong, Yang, Hui, Hong, Yang, Yao, Jia-Fei (2015) One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation. Chinese Physics B, 24. 28502pp. doi:10.1088/1674-1056/24/2/028502 |
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| Plain Text | Zhang, Jun, Guo, Yu-Feng, Xu, Yue, Lin, Hong, Yang, Hui, Hong, Yang, Yao, Jia-Fei (2015) One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation. Chinese Physics B, 24. 28502pp. doi:10.1088/1674-1056/24/2/028502 |
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| In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing |
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